氮气流量对磁控溅射法沉积NGZO薄膜性能的影响

发布时间：2018-11-09 21:09

【摘要】：目的通过磁控溅射镀膜工艺,在玻璃上制备高质量的氮镓共掺杂氧化锌(NGZO)薄膜。方法采用射频磁控溅射法,同时通入氩气和氮气,在流量比分别为25/10、25/20、25/25、25/30((m L/min)/(m L/min))条件下制备NGZO薄膜。通过XRD和SEM对薄膜的物相结构和表面形貌进行分析,通过紫外/可见分光光度计和霍尔效应测试仪对薄膜透过率和载流子浓度、迁移率及薄膜电阻率进行研究。结果与未掺入N的Ga掺杂氧化锌(GZO)薄膜相比,在可见光区,尤其是600~800 nm范围内,NGZO薄膜平均透过率在80%以上,符合透明导电薄膜透过率的要求。GZO薄膜载流子浓度较高,电阻率较低,而掺入N后薄膜的载流子浓度和迁移率有所下降,电阻率有所增加。结论在N-Ga共掺杂薄膜中,N的掺杂主要占据O空位,并吸引空位周围的电子,这减小了薄膜晶格畸变,并产生电子空穴,最终使得薄膜中电子载流子浓度降低,空穴载流子浓度增加,电阻率有所增加。随着氮气流量的变化,发现在25 m L/min时,薄膜具有最佳的综合性能。这种薄膜可用于紫外光探测器等需较大电阻率的应用中,并有望实现n-p型转化。
[Abstract]:Aim to prepare high quality gallium nitride co-doped zinc oxide (NGZO) thin films on glass by magnetron sputtering. Methods NGZO thin films were prepared by RF magnetron sputtering with argon and nitrogen at a flow ratio of 25 / 10 / 25 / 20 / 25 / 25 / 25 / 25 / 30 (m L/min / (m L/min) respectively. The phase structure and surface morphology of the films were analyzed by XRD and SEM. The transmittance, carrier concentration, mobility and resistivity of the films were studied by ultraviolet / visible spectrophotometer and Hall effect tester. Results compared with Ga doped (GZO) films without N, the average transmittance of NGZO films was over 80% in the visible region, especially in the range of 600,800 nm. The average transmittance of NGZO films met the requirements of transparent conductive films. The carrier concentration of GZO thin films was higher. The resistivity is lower, but the carrier concentration and mobility of the films decrease, and the resistivity increases after the addition of N. Conclusion in N-Ga co-doped films, the N doping mainly occupies O vacancies and attracts electrons around the vacancies, which reduces the lattice distortion of the films and produces electron holes, which ultimately reduces the electron carrier concentration in the films. The hole carrier concentration increases and the resistivity increases. With the change of nitrogen flow rate, it is found that the film has the best comprehensive properties at 25 m L/min. This kind of thin film can be used in the application of ultraviolet detector and so on, and it is expected to realize n-p type conversion.
【作者单位】：上海工程技术大学材料工程学院;
【分类号】：TB383.2

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