二氧化铪纳米薄膜的溶胶—凝胶制备工艺研究
发布时间：2018-11-12 08:01
【摘要】：作为代表性的高-k材料,Hf02与硅基CMOS集成电路工艺具有良好的兼容性,并已经被广泛应用于微电子工业。近几年的研究发现,使用特殊工艺制备的Hf02基薄膜具有优异的铁电性能。因此,采用Hf02基新型铁电薄膜材料代替锆钛酸铅(PZT)等传统铁电材料将有望突破制约非易失性铁电存储器发展的材料瓶颈。 本论文初步探索了两种不同的溶胶.凝胶工艺制备纯Hf02以及Y掺杂的Hf02纳米薄膜。具有铁电性的Hf02薄膜制备在工艺上有几个难点需要注意：薄膜厚度要足够薄,需将薄膜控制在10nm左右；制备工艺需满足薄膜中掺杂的要求；最后,Hf02薄膜质量需满足电学性能要求。采用椭偏仪和X射线反射率(XRR)技术测量薄膜的厚度；薄膜表面形貌以及表面粗糙度的测试通过原子力显微镜(AFM)来完成；采用X射线光电子能谱(XPS)对薄膜化学键结合情况以及各元素的含量进行了分析；最后,通过铁电性能分析仪对Y掺杂Hf02薄膜电容器的电学性能进行了测量。 采用表面溶胶.凝胶方法可以制备出超薄Hf02薄膜,但是随着浸镀次数的增加,薄膜的生长趋于饱和,膜厚很难超过5nm；同时该工艺难以对薄膜进行掺杂改性。采用纯水基溶胶.凝胶工艺能够稳定制备出厚度为10nm的Y掺杂Hf02薄膜,薄膜成分符合化学计量比,表面粗糙度仅为0.19nm,初步的电学性能测试结果表明该工艺适合于面向存储器应用的高性能Hf02基铁电薄膜的制备。
[Abstract]:As a representative high-k material, Hf02 has good compatibility with silicon-based CMOS integrated circuit technology, and has been widely used in microelectronics industry. In recent years, it has been found that Hf02 based films prepared by special process have excellent ferroelectric properties. Therefore, the use of new ferroelectric thin films based on Hf02 to replace traditional ferroelectric materials such as lead zirconate titanate (PZT) will be expected to break through the material bottleneck which restricts the development of nonvolatile ferroelectric memory. In this paper, two different sols were preliminarily explored. Pure Hf02 and Y doped Hf02 nanocrystalline films were prepared by gel process. There are several difficulties in the preparation of ferroelectric Hf02 thin films. The thickness of the thin films should be thin enough to control the thin films about 10nm and the preparation process should meet the requirements of doping in the films. Finally, the quality of Hf02 films should meet the requirements of electrical properties. The thickness of the films was measured by ellipsometry and X-ray reflectance (XRR). The surface morphology and roughness of the films were measured by atomic force microscope (AFM) (AFM). X-ray photoelectron spectroscopy (XPS) was used to analyze the binding of chemical bonds and the contents of various elements in the films. Finally, the electrical properties of Y doped Hf02 thin film capacitors were measured by ferroelectric performance analyzer. Surface sol was used. Ultrathin Hf02 thin films can be prepared by gel method, but with the increase of dipping times, the growth of the films tends to saturation, the film thickness is difficult to exceed 5 nm, and it is difficult to modify the films by doping. Pure water based sol was used. Y-doped Hf02 thin films with thickness of 10nm can be prepared stably by gel process. The composition of the films conforms to stoichiometric ratio, and the surface roughness is only 0.19 nm. The preliminary test results of electrical properties show that this process is suitable for the preparation of high performance Hf02 based ferroelectric thin films for memory applications.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TQ134.13;TB383.2
本文编号：2326541
[Abstract]:As a representative high-k material, Hf02 has good compatibility with silicon-based CMOS integrated circuit technology, and has been widely used in microelectronics industry. In recent years, it has been found that Hf02 based films prepared by special process have excellent ferroelectric properties. Therefore, the use of new ferroelectric thin films based on Hf02 to replace traditional ferroelectric materials such as lead zirconate titanate (PZT) will be expected to break through the material bottleneck which restricts the development of nonvolatile ferroelectric memory. In this paper, two different sols were preliminarily explored. Pure Hf02 and Y doped Hf02 nanocrystalline films were prepared by gel process. There are several difficulties in the preparation of ferroelectric Hf02 thin films. The thickness of the thin films should be thin enough to control the thin films about 10nm and the preparation process should meet the requirements of doping in the films. Finally, the quality of Hf02 films should meet the requirements of electrical properties. The thickness of the films was measured by ellipsometry and X-ray reflectance (XRR). The surface morphology and roughness of the films were measured by atomic force microscope (AFM) (AFM). X-ray photoelectron spectroscopy (XPS) was used to analyze the binding of chemical bonds and the contents of various elements in the films. Finally, the electrical properties of Y doped Hf02 thin film capacitors were measured by ferroelectric performance analyzer. Surface sol was used. Ultrathin Hf02 thin films can be prepared by gel method, but with the increase of dipping times, the growth of the films tends to saturation, the film thickness is difficult to exceed 5 nm, and it is difficult to modify the films by doping. Pure water based sol was used. Y-doped Hf02 thin films with thickness of 10nm can be prepared stably by gel process. The composition of the films conforms to stoichiometric ratio, and the surface roughness is only 0.19 nm. The preliminary test results of electrical properties show that this process is suitable for the preparation of high performance Hf02 based ferroelectric thin films for memory applications.
【学位授予单位】：大连理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TQ134.13;TB383.2
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