垂直阵列CNTs纳米吸气剂制备工艺研究
发布时间：2019-03-24 18:34
【摘要】：在MEMS技术中,真空封装是一项关键技术问题,其中吸气剂工艺是高真空度获得和维持的必要条件。本实验室以CNTs作为骨架,利用CNTs具有高比表面积和自身储气等特性制备了一种吸气效率高、工艺简单、成本低的纳米吸气剂,但受限于CNTs生长条件苛刻,与基底粘附力差,易污染等缺点。本论文提出基于VA-CNTs转移技术的纳米吸气剂,为更进一步利用CNTs高比表面积和自身储气的优点,克服集成于MEMS器件的相关缺点提供一类新的解决方案。 本文主要针对增大吸气剂单位面积的吸气速率和吸气量两方面,开展了在制备与激活吸气剂薄膜工艺的研究、优化,如溅射功率、压强、时间以及温度等参数。具体研究工作包括以下几个部分： (1)在吸气剂经典模型的基础上,提出了适用于CNTs纳米吸气剂的吸气模型,并进行详细的理论分析,得到VA-CNTs/Ti纳米吸气剂的吸气动力学图。与Ti膜吸气剂相比,VA-CNTs/Ti纳米吸气剂的物理吸附速度是其n倍(n=S2/S1,S为比表面积),扩散速度是其m倍(m=n(?)d2V(t)dt/(?)nd2V(t)dt,V(t)为Ti膜扩散速度,d2为Ti膜厚度)。 (2)分析、归纳垂直阵列CNTs生长机制,优化CVD工艺参数,制备VA-CNTs.提出并成功实现了基于玻璃浆料粘结剂的纳米吸气剂转移技术。对VA-CNTs纳米吸气剂的制备和激活工艺进行了相关方面研究。在VA-CNTs上溅射Ti的最佳工艺参数为8Pa,350W,10min。纳米吸气剂的最佳激活工艺条件为600℃,30min。 (3)采用BET法对纳米吸气剂进行比表面积测试,结果表明VA-CNTs/Ti的BET比表面积为275.0071m2/g,证明了纳米吸气剂具有高比表面积。 (4)针对VA-CNTs纳米吸气剂,采用TGA对其吸气性能测试,结果证明VA-CNTs/Ti纳米吸气剂具有吸气性。
[Abstract]:Vacuum packaging is a key technical problem in MEMS technology, in which suction process is the necessary condition for high vacuum degree to be obtained and maintained. Using CNTs as skeleton, using CNTs with high specific surface area and its own gas storage characteristics, a kind of nano-absorbent with high suction efficiency, simple process and low cost was prepared. However, due to the harsh growth conditions of CNTs, and the poor adhesion to the substrate, the nano-absorbent was prepared with the advantages of high suction efficiency, simple process and low cost. The weakness of being easy to pollute. In this paper, nano-absorbent based on VA-CNTs transfer technology is proposed, which provides a new solution to make further use of the advantages of CNTs with high specific surface area and its own gas storage, and to overcome the relative shortcomings of integrated MEMS devices. In this paper, the process of preparing and activating getter film was studied and optimized, such as sputtering power, pressure, time, temperature and so on, in order to increase the suction rate and gas absorption rate per unit area of getter. The specific research work includes the following parts: (1) based on the classical model of suction agent, the inspiratory model suitable for CNTs nano-absorbent is proposed, and the theoretical analysis is carried out in detail. The inspiratory kinetic diagram of VA-CNTs/Ti nano-absorbent was obtained. Compared with Ti membrane getter, the physical adsorption rate and diffusion rate of VA-CNTs/Ti nano-absorbent are n-fold (n-S _ 2-S _ 1, S-specific surface area) and m-fold (m ~ (?) d _ (2) V-(t) dt/ (?) nd2V (t) dt,). V (t) is the diffusion rate of Ti film and D2 is the thickness of Ti film. (2) to analyze and summarize the growth mechanism of vertical array CNTs, optimize the technological parameters of CVD, and prepare VA-CNTs.. The nano-absorbent transfer technology based on glass paste binder was proposed and successfully realized. The preparation and activation process of VA-CNTs nano-absorbent were studied in this paper. The optimum parameters of sputtering Ti on VA-CNTs were 8 Pa, 350 W, 10 min. The optimum activation conditions of nano-absorbent were 600 鈩，
本文编号：2446578
[Abstract]:Vacuum packaging is a key technical problem in MEMS technology, in which suction process is the necessary condition for high vacuum degree to be obtained and maintained. Using CNTs as skeleton, using CNTs with high specific surface area and its own gas storage characteristics, a kind of nano-absorbent with high suction efficiency, simple process and low cost was prepared. However, due to the harsh growth conditions of CNTs, and the poor adhesion to the substrate, the nano-absorbent was prepared with the advantages of high suction efficiency, simple process and low cost. The weakness of being easy to pollute. In this paper, nano-absorbent based on VA-CNTs transfer technology is proposed, which provides a new solution to make further use of the advantages of CNTs with high specific surface area and its own gas storage, and to overcome the relative shortcomings of integrated MEMS devices. In this paper, the process of preparing and activating getter film was studied and optimized, such as sputtering power, pressure, time, temperature and so on, in order to increase the suction rate and gas absorption rate per unit area of getter. The specific research work includes the following parts: (1) based on the classical model of suction agent, the inspiratory model suitable for CNTs nano-absorbent is proposed, and the theoretical analysis is carried out in detail. The inspiratory kinetic diagram of VA-CNTs/Ti nano-absorbent was obtained. Compared with Ti membrane getter, the physical adsorption rate and diffusion rate of VA-CNTs/Ti nano-absorbent are n-fold (n-S _ 2-S _ 1, S-specific surface area) and m-fold (m ~ (?) d _ (2) V-(t) dt/ (?) nd2V (t) dt,). V (t) is the diffusion rate of Ti film and D2 is the thickness of Ti film. (2) to analyze and summarize the growth mechanism of vertical array CNTs, optimize the technological parameters of CVD, and prepare VA-CNTs.. The nano-absorbent transfer technology based on glass paste binder was proposed and successfully realized. The preparation and activation process of VA-CNTs nano-absorbent were studied in this paper. The optimum parameters of sputtering Ti on VA-CNTs were 8 Pa, 350 W, 10 min. The optimum activation conditions of nano-absorbent were 600 鈩，
本文编号：2446578
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