盘结构电容式MEMS谐振器相关性能研究

发布时间：2018-05-05 14:35

本文选题：MEMS圆盘谐振器 + 可靠性　；参考：《杭州电子科技大学》2015年硕士论文

【摘要】：微机电系统(MEMS)由于具有体积小、集成度高以及与IC工艺兼容性好等优点,因而广泛应用于汽车导航、生物医学以及军事领域等。在众多MEMS器件中,电容式圆盘谐振器由于具有功耗低、谐振频率高、Q值高等优势,已逐步取代传统石英晶体基准并广泛应用于振荡器、滤波器等无线通信系统中。据此,本文对电容式圆盘谐振器进行了系统的研究。第1章阐述了研究的目的和意义。首先介绍了MEMS的基本系统组成、主要特点以及发展状况;然后简要说明了MEMS的制造工艺;接着介绍了MEMS的应用以及相关产品;再者,针对研究的MEMS圆盘谐振器,介绍了几种常见的谐振器;最后简单说明了文章所需分析的内容与安排。第2章研究了MEMS圆盘谐振器的基本原理。首先介绍了圆盘谐振器的基本运行原理;然后重点分析了圆盘谐振器的主要参数:谐振频率、有效质量、运动电阻、品质因数、输出电流以及功率处理能力等;最后,分析了圆盘谐振器的等效电子电路以及静电弹簧软化效应。第3章研究了强惯性冲击下MEMS圆盘谐振器的可靠性。首先对双端支撑的圆盘谐振器的结构进行了简要分析;然后对圆盘谐振器分别受到阶跃加速度和脉冲加速度下的可靠性进行了理论分析;最后,通过文献中的特定圆盘尺寸,得出了不同偏置电压下圆盘所能承受的最大惯性加速度;结果表明,当外界阶跃冲击为13000g时,谐振器可靠性降低为原来的75%;而当圆盘受到脉冲冲击时,若脉冲宽度与幅度乘积为10000μm/s,圆盘的可靠性降为原来的85%。第4章研究了形变对圆盘谐振器的电气刚度影响。重点研究了圆盘分别受到径向静电力、纵向惯性力时的形变量,并以此分析电气刚度的改变量;研究结果表明:当圆盘受到径向静电力时,若间隙降为50nm且电压达到50V,径向形变量可以达到间隙的2.05%,电气刚度改变6.15%;当圆盘受到纵向惯性力时,若圆盘的半径为100μm且惯性加速度为10000g,其最大形变量可以达到圆盘厚度的2.4%,电气刚度改变2.4%。第5章研究了DRIE工艺下的倾斜效应对MEMS圆盘谐振器的影响。首先分析了DRIE工艺下的倾斜效应形成原理;其次分析了倾斜效应对圆盘谐振器的电容量、静电力、电气刚度、运动电阻和输出电流的影响,并进行了相应的ANSYS仿真;结果表明,当倾斜角度为0.1o??时,实际电容量、静电力、电气刚度和输出电流减小为原来的0.76、0.6、0.47和0.32,而运动电阻变为原来的3.15倍;最后,分别计算了倾斜效应对单个圆盘以及圆盘阵列谐振频率的影响,得到了静电调谐所需的最优调谐电压;结果表明,当倾斜角度为=0.3o?时,其最优调谐电压能达到450V;而要使运动电阻降到50?,阵列耦合的圆盘个数要达到715个,调谐电压高达469V。第6章总结了全文的研究成果并分析了论文中的不足,并且对后续工作进行了展望。
[Abstract]:Because of its advantages of small size, high integration and good compatibility with IC process, MEMS has been widely used in automotive navigation, biomedical and military fields. Among many MEMS devices, capacitive disk resonators have been gradually replaced by traditional quartz crystal reference and widely used in wireless communication systems such as oscillators and filters because of their advantages of low power consumption, high resonant frequency and high Q value. Accordingly, the capacitive disk resonator is systematically studied in this paper. Chapter 1 describes the purpose and significance of the research. This paper first introduces the basic system composition, main characteristics and development status of MEMS; then briefly describes the manufacturing process of MEMS; then introduces the application of MEMS and related products; thirdly, aiming at the studied MEMS disk resonator, Several common resonators are introduced, and the content and arrangement of the analysis are briefly explained. In chapter 2, the basic principle of MEMS disk resonator is studied. This paper introduces the basic operation principle of disk resonator, and then analyzes the main parameters of disk resonator, such as resonant frequency, effective mass, motion resistance, quality factor, output current and power processing ability. The equivalent electronic circuit of disk resonator and the softening effect of electrostatic spring are analyzed. In chapter 3, the reliability of MEMS disk resonator under strong inertial shock is studied. Firstly, the structure of the disk resonator supported by two ends is analyzed briefly; then, the reliability of the disk resonator under step acceleration and pulse acceleration is analyzed theoretically. The maximum inertia acceleration of the disk under different bias voltages is obtained. The results show that the reliability of the resonator decreases to 75g when the external step impact is 13000g, and when the disk is impacted by the pulse, If the product of pulse width and amplitude is 10000 渭 m / s, the reliability of the disk will be reduced to 85kum. In chapter 4, the effect of deformation on the electrical stiffness of disk resonator is studied. The shape variables of the disk subjected to radial electrostatic force and longitudinal inertial force are studied, and the change of electrical stiffness is analyzed. The results show that: when the disk is subjected to radial static force, If the gap is reduced to 50nm and the voltage reaches 50 V, the radial variable can reach 2.05 of the gap, and the electrical stiffness changes 6.15. When the disk is subjected to longitudinal inertia force, If the radius of the disk is 100 渭 m and the inertia acceleration is 10000g, the maximum shape variable can reach 2.4% of the disk thickness, and the electrical stiffness changes 2.4g. In chapter 5, the effect of tilt effect on MEMS disk resonator under DRIE process is studied. Firstly, the formation principle of tilt effect in DRIE process is analyzed. Secondly, the influence of tilting effect on the capacitance, static power, electrical stiffness, motion resistance and output current of disk resonator is analyzed, and the corresponding ANSYS simulation is carried out. When the tilt angle is 0. 1 oC? The actual capacitance, static power, electrical stiffness and output current are reduced to 0.76U 0.6N 0.47 and 0.32, while the motion resistance is 3.15 times of the original. Finally, the effects of tilt effect on the resonant frequencies of single disk and disk array are calculated, respectively. The optimal tuning voltage for electrostatic tuning is obtained, and the results show that when the tilt angle is 0.3o? The optimal tuning voltage can reach 450 V, and to reduce the motion resistance to 50 V, the number of array coupling disks and tuning voltage are 715 and 469 V respectively. Chapter 6 summarizes the research results, analyzes the shortcomings of the thesis, and looks forward to the follow-up work.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TH-39

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