忆阻器的电路模型及其应用研究

发布时间：2018-04-22 03:10

本文选题：忆阻器 + 电路模型　；参考：《华南理工大学》2014年硕士论文

【摘要】：忆阻器是华裔科学家蔡少棠于1971年提出的一种无源器件，它是电路中除电阻、电容、电感的第四种基本元件，它反映了电路中磁通量φ和电荷量q的关系。2008年惠普实验室成功用TiO2薄膜制作出忆阻器，验证了忆阻器的真实存在，使得忆阻器的原理与应用成为国际电路学研究的热点和前沿问题之一。但由于TiO2薄膜忆阻器为纳米级器件，不能用直接在电力电子电路中，为便于对忆阻器进行在电力电子领域内的应用研究，需要建立忆阻器的电路模型以满足实验要求，并以此为基础进一步探讨忆阻器在电力电子电路中的应用可能性。本文通过分析忆阻器的电气特性和现有的电路模型优缺点，提出了一种忆阻器电路模型搭建方法，并通过实验验证了模型的有效性，然后提出了忆阻器应用于缓冲电路的设想，再应用新提出的忆阻器模型对该设想进行了验证。本文所做的工作包括以下几方面： 1.研究了忆阻器的定义和惠普公司忆阻器的特性，对现有的忆阻器的电路模型进行了讨论，基于现有模型结构复杂、参数整定繁琐等缺点，提出了一种新型的荷控型和磁控型忆阻器电路模型的搭建方法，该模型使用乘、除法器等运算电路搭建出一个受控电压源，使得模型的输入电压电流关系符合忆阻器的定义，而且电路的实现方式简单、工作可靠，还可以根据实际应用需要，，通过设定直流电压、电阻等参数的大小，实现忆阻值的工作范围灵活调节，然后通过实验验证了该模型的有效性。 2.针对现阶段的忆阻器电路模型功率等级较低这一缺点，提出一种大功率的忆阻器电路模型。该模型以D类功率放大器作为受控电压源的输出级，把作为控制级集成电路从主电路中分离出去，有效提高了电路模型的功率，并通过仿真和RT-LAB环境下的半实物模型验证了提出的大功率忆阻器电路模型的有效性。 3.对传统的RC缓冲电路和RCD嵌位电路的工作机理进行了分析，提出了用忆阻器代替RC作为缓冲器件和用MD（忆阻器和二极管）嵌位电路代替RCD元件作为缓冲器的设想，利用本文提出的忆阻器电路模型，在仿真中论证了两种忆阻缓冲电路的可行性，并在实例计算中得出的忆阻型缓冲和嵌位电路比传统RC缓冲电路和RCD嵌位电路更为节能的结论。
[Abstract]:The memristor is a passive device which was proposed by Chinese American scientist Cai Shaotang in 1971. It is the fourth basic elements of electrical resistance, capacitance and inductance in the circuit. It reflects the relationship between the flux in the circuit and the charge amount Q. The HP laboratory successfully uses TiO2 film to make a memristor in.2008 laboratory. It verifies the true existence of the memristor and makes the memristor The principle and application of the device have become one of the hotspots and frontiers of international circuit research. But because the TiO2 memristor is a nanometer device, it can not be used directly in power electronic circuits to facilitate the research on the application of the memristor in the field of power electronics. It needs to establish a circuit model of the memristor to meet the requirements of the experiment. Based on this, we further explore the possibility of memristor in power electronic circuits.
In this paper, by analyzing the electrical characteristics of the memristor and the advantages and disadvantages of the existing circuit model, a method of building the circuit model of the memristor is put forward, and the validity of the model is verified by the experiment. Then the idea of the application of the memristor in the buffer circuit is put forward, and the new memristor model is used to verify the idea.
The work done in this article includes the following aspects:
1. the definition of the memristor and the characteristics of the Hewlett-Packard Co memristor are studied. The circuit model of the existing memristor is discussed. Based on the complex structure of the existing model and the cumbersome parameter setting, a new method of building the circuit model of the charge controlled and magnetically controlled memristor is proposed. The model uses the multiplicative, divider and other operational circuits. A controlled voltage source is set up, which makes the input voltage and current relation of the model conforms to the definition of the memristor, and the realization of the circuit is simple and reliable. The working range of the memory resistance can be adjusted flexibly by setting the DC voltage and resistance parameters according to the practical application needs, and the experiment is verified by the experiment. The validity of the model.
2. in view of the disadvantage of low power level in the current memristor circuit model, a high power recristor circuit model is proposed. This model takes the D class power amplifier as the output level of the controlled voltage source, separates the control level integrated circuit from the main circuit, effectively improves the power of the circuit model, and through simulation and RT- The hardware in the loop model under LAB environment verifies the effectiveness of the proposed high power memristor circuit model.
3. the working mechanism of the traditional RC buffer circuit and the RCD inlay circuit is analyzed. The idea of replacing the RC with the memristor and using the MD (memristor and diode) inlay circuit instead of the RCD element is proposed. By using the circuit mode of the memristor proposed in this paper, two kinds of memristor buffer circuits are demonstrated in the simulation. It is concluded that the memristor buffer and the insertion circuit obtained in the calculation of the example are more energy efficient than the traditional RC buffer circuit and the RCD insertion circuit.

【学位授予单位】：华南理工大学
【学位级别】：硕士
【学位授予年份】：2014
【分类号】：TM13

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