缺陷态密度对纳米硅太阳能电池的影响
发布时间：2018-12-14 15:16
【摘要】：运用美国宾州大学发展的AMPS-1D程序模拟了P-I-N结构的纳米硅薄膜太阳电池中I层、P-I界面、N-I界面的缺陷态密度对电池的输出特性的影响。结果表明,在其他参数保持不变的情况下,随着I层缺陷态密度的增大,I层的最佳厚度逐渐减小,且效率降低。P-I界面的缺陷态密度对电池输出特性的影响十分显著,随着缺陷态密度及界面层厚度的增大,效率下降。而N-I界面态对电池的影响不大
[Abstract]:The effect of the density of defect states on the output characteristics of P-I-N nanocrystalline silicon thin film solar cells was simulated by using the AMPS-1D program developed by the University of Pennsylvania, USA. The results show that with the increase of the density of defect states in layer I, the optimum thickness of layer I decreases and the efficiency decreases when other parameters remain unchanged. The effect of the density of defect states at P-I interface on the output characteristics of the battery is very significant. With the increase of the density of defect states and the thickness of interface layer, the efficiency decreases. But the N-I interface state has little effect on the battery.
【作者单位】： 中国地质大学(北京)工程技术学院;中国地质大学(北京)土地科学技术学院;中国地质大学(北京)数理学院;
【分类号】：TQ127.2;TM914.4
，
本文编号：2378819
[Abstract]:The effect of the density of defect states on the output characteristics of P-I-N nanocrystalline silicon thin film solar cells was simulated by using the AMPS-1D program developed by the University of Pennsylvania, USA. The results show that with the increase of the density of defect states in layer I, the optimum thickness of layer I decreases and the efficiency decreases when other parameters remain unchanged. The effect of the density of defect states at P-I interface on the output characteristics of the battery is very significant. With the increase of the density of defect states and the thickness of interface layer, the efficiency decreases. But the N-I interface state has little effect on the battery.
【作者单位】： 中国地质大学(北京)工程技术学院;中国地质大学(北京)土地科学技术学院;中国地质大学(北京)数理学院;
【分类号】：TQ127.2;TM914.4
，
本文编号：2378819
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