利用工艺和器件仿真优化发射极提高单晶硅电池转换效率

发布时间：2019-03-20 10:23

【摘要】：利用半导体工艺及器件仿真工具TCAD软件的工艺仿真模块模拟单晶硅电池制造过程中的扩散和热氧化过程,得到与测试结果相一致的掺杂分布曲线。在工艺仿真基础上,利用TCAD软件的器件仿真模块计算电池的转换效率和内量子效率,发现通过降低扩散温度以及在扩散之后加入热氧化工艺可减小发射极表面附近的掺杂,从而减小发射极复合以及表面复合,且热氧化还可减少发射极方阻,如果电池接触电阻增加较小的话,上述工艺可提高转换效率。通过测试实际电池的量子效率曲线对仿真进行验证,说明了器件仿真的准确性。
[Abstract]:The diffusion and thermal oxidation processes in the manufacturing process of the single-crystal silicon battery are simulated by a process simulation module of the semiconductor process and the device simulation tool TCAD software to obtain a doping profile curve which is consistent with the test result. on the basis of the process simulation, the conversion efficiency and the internal quantum efficiency of the battery are calculated by the device simulation module of the TCAD software, and the doping in the vicinity of the emitter surface can be reduced by reducing the diffusion temperature and adding a thermal oxidation process after diffusion, So as to reduce the emitter recombination and the surface recombination, and the thermal oxidation can also reduce the emitter resistance, and if the contact resistance of the battery is increased, the process can improve the conversion efficiency. The simulation is verified by testing the quantum efficiency curve of the actual battery, and the accuracy of the device simulation is described.
【作者单位】：中国科学院半导体研究所集成光电子学国家重点实验室;
【基金】：国家自然科学基金(60776046;60976046;60837001;61021003) 国家重大科学研究计划(2010CB933800)
【分类号】：TM914.4

【共引文献】