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多聚焦极栅控电子模拟源的研究

发布时间:2019-01-26 19:10
【摘要】:采用电子光学软件设计模拟了一种长焦距多聚焦级的电子枪结构.利用电子透镜原理分析多聚焦极电子枪的电子束斑产生,依据不同栅控电压,分析零场模式、拒斥场模式和肖特基场模式3种阴极电子发射方式下电子聚焦情况.模拟结果表明:拒斥场模式和肖特基场模式对电子束流密度分别有减弱和增强的作用;当聚焦极电压比U1∶U2∶U3∶U4∶U5=5∶8∶15∶70∶100时,能量为30keV的电子束焦斑最小,在10m处焦斑大小为160mm.
[Abstract]:An electron gun structure with long focal length and multi-focus level was designed and simulated by using electronic optical software. The generation of electron beam spot of multi-focus electron gun is analyzed by using the principle of electron lens. According to the different gate control voltage, the electron focusing is analyzed under three cathode electron emission modes: zero field mode, rejection field mode and Schottky field mode. The simulation results show that the repellent field model and the Schottky field model have the effect of weakening and enhancing the electron beam density respectively. When the voltage ratio of the focusing pole is U1:U2:U3:U4:U5=5:8:15:70:100, the electron beam focal spot with the energy of 30keV is the smallest, and the focal spot size is 160 mm at 10 m.
【作者单位】: 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室;中国科学院大学;
【基金】:国家自然科学基金(No.61471357) 中国科学院“西部之光”和地理信息工程国家重点实验室开放研究基金(No.SKLGIE2014-M-2-1)资助~~
【分类号】:V416


本文编号:2415809

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