用于空间探测的电子元器件辐照性能研究

发布时间：2019-02-12 17:19

【摘要】：辐射效应是近年来航天器有效载荷电子系统及设备失效的主要原因之一。单粒子闩锁可能拉低电源系统总线,甚至烧毁星上电源;单粒子翻转效应会导致数据出错;总剂量效应会导致器件性能变差甚至失效。如何获得电子元器件的以上辐照性能,设计加固保护措施和措施有效性验证就成了一个值得研究的问题。本文针对暗物质粒子探测卫星硅阵列探测器电子学读出系统用量很大的两种芯片AD7476和DS18S20Z,开展了以下研究:(1)根据暗物质粒子探测卫星硅阵列探测器电子学读出系统工作情况,设计了一套电子元器件辐照性能研究系统,完成了电路原理图、PCB设计和硬件电路调试。(2)完成了FPGA程序设计和基于Labwindows/CVI的上位机程序设计。(3)通过重离子加速器实验终端对AD7476和DS18S20Z进行了辐照测试,探索了这两款芯片的单粒子闩锁能量阈值、闩锁电流和单粒子翻转情况。(4)针对AD7476和DS18S20Z的单粒子闩锁和单粒子翻转特性,设计了单粒子闩锁加固保护措施,讨论了单粒子翻转数据处理措施。(5)进行了激光脉冲模拟单粒子效应实验初步验证SEL加固保护措施的有效性;进行了重离子加速器实验终端实验再次验证加固保护措施的有效性。(6)通过钴60辐射对AD7476和DS18S20Z进行了总剂量特性研究,并对总剂量影响进行评估分析。实验结果表明,AD7476发生锁定时,LET闩锁阈值为14Me V*cm2/mg电流增量在30m A以上;采用20m A闩锁电量增量作为断电阈值,‘断电1秒、再上电’的锁定保护措施十分有效。DS18S20的LET闩锁阈值为15Me V*cm2/mg,电流增量在15-30m A;使用了“在LDO串联100欧姆限流电阻”的方法来达到闩锁保护,实验验证结果表明这种保护措施非常有效。讨论了DS18S20Z SEU现象数据处理方法,内部寄存器值CRC校验;在轨温度数据在地面绘制温度曲线,剔除毛刺或者单点跳变;对每一温度采集进行多次次采集,通过剔除最大值和最小值的三种方法剔除SEU数据。总剂量实验评估表明,两种芯片总剂量性能可以承受三年在轨能量沉积。
[Abstract]:Radiation effect is one of the main reasons for the failure of spacecraft payload electronic system and equipment in recent years. The single particle latch may lower the bus of the power supply system, even destroy the on-board power supply; the single particle flip effect will lead to the data error; the total dose effect will lead to the deterioration or even failure of the device performance. How to obtain the above irradiating properties of electronic components and how to design reinforcement and protection measures and verify the effectiveness of these measures have become a problem worthy of study. In this paper, two kinds of chips, AD7476 and DS18S20Z, which are used in the electronic readout system of dark matter particle detection satellite silicon array detector are studied. The following studies have been carried out: (1) according to the work of the electronic readout system of the dark matter particle detection satellite silicon array detector, a research system for the radiation performance of electronic components is designed, and the circuit schematic diagram is completed. PCB design and hardware circuit debugging. (2) FPGA program design and host computer program design based on Labwindows/CVI are completed. (3) AD7476 and DS18S20Z are irradiated by heavy ion accelerator experiment terminal. The single particle latch energy threshold, latch current and single particle flip are explored. (4) single particle latch reinforcement and protection measures are designed for the single particle latch and single particle flip characteristics of AD7476 and DS18S20Z. The data processing measures of single particle inversion are discussed. (5) the effectiveness of SEL reinforcement and protection measures is preliminarily verified by the experiment of laser pulse simulation of single particle effect; The experimental terminal experiment of heavy ion accelerator was carried out to verify the effectiveness of the reinforcement and protection measures. (6) the total dose characteristics of AD7476 and DS18S20Z were studied by cobalt 60 radiation and the effects of total dose were evaluated and analyzed. The experimental results show that the latch threshold of AD7476 is more than 30mA when 14Me V*cm2/mg latch occurs. Using the 20 Ma latch power increment as the power off threshold, the locking protection measure of 'power off for 1 second and then power on' is very effective. The LET latch threshold of DS18S20 is 15Me VN cm2 / mg, and the current increment is 15-30 Ma; The method of "100ohm current limiting resistance in series at LDO" is used to achieve latch protection. The experimental results show that this protection is very effective. The data processing method of DS18S20Z SEU phenomenon, the CRC check of internal register value, the drawing of temperature curve on the ground with the in-orbit temperature data, the elimination of burr or single point jump are discussed. The SEU data are eliminated by three methods: the maximum value and the minimum value. The total dose performance of the two chips can withstand three years of on-orbit energy deposition.
【学位授予单位】：郑州大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：V447.1

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