氟磷共掺杂二氧化锡（FPTO）导电材料的制备及性能研究
发布时间：2018-09-13 13:02
【摘要】：具有宽禁带半导体特性的二氧化锡,经过掺杂元素后,具有优异的电学及光学性能,其熔点高、颜色浅、抗氧化能力高、耐酸碱、毒性小等优点广泛地应用于导电\防静电材料、电池电极材料、电磁屏蔽、太阳能薄膜电池、隔热材料等众多领域中。但其存在问题之一——导电性不够优异,因此需进一步提高氧化锡基导电材料的导电性。目前对于氧化锡基导电材料的研究主要在于单元素掺杂,而双掺杂鲜有研究。本文采用溶胶-凝胶法制备氟磷共掺杂二氧化锡(FPTO)粉体及其透明薄膜材料,研究制备工艺条件对材料导电性能的影响,并从而确定出较适宜的制备工艺条件。论文主要研究结果如下。(1)以二水氯化亚锡(SnCl2·2H2O)、无水乙醇(CH3CH2OH)、氢氟酸(HF)及磷酸(H3PO4)为原料,利用溶胶-凝胶法制备出导电性良好的FPTO粉体材料,研究了掺杂量、水浴温度、水浴时间、煅烧温度等制备工艺条件对FPTO导电性能的影响,确定了较适宜的制备工艺参数：掺氟量约为15%,掺磷量约为25%, Sn浓度为0.4mol/L,水浴温度为70℃,水浴时间为4h,掺杂剂在水浴后两小时加入,煅烧温度为6000C,煅烧时间为2h,在此工艺条件下制备出FPTO粉体的颗粒粒径为10-30nm,圆球型,且粒度均匀,电阻率为0.113Ω.cm。(2)研究了溶胶-凝胶法制备FPTO薄膜的制膜工艺条件对膜面微观形貌的影响规律。获得较适宜的制膜工艺条件为：基底经过强酸碱处理,转速为2000r/min,涂膜次数为10次,溶胶浓度0.67mol/L,煅烧升温程序：室温至300℃,0.25℃/min; 300-500℃,5℃/min。但得到的薄膜微观形貌仍连续性不足,部分脱落。最佳工艺条件下所得薄膜方块电阻在104 Ω/□,可见光透过率在70-80%。导电性未达到可商业化应用的目标,究其原因主要在于薄膜微观连续性差,因此建议今后重点对制膜薄膜的工艺条件进行进一步探索。
[Abstract]:Tin dioxide with wide band gap semiconductor properties, after doping elements, has excellent electrical and optical properties, high melting point, light color, high oxidation resistance, acid and alkali resistance, The advantages of low toxicity are widely used in many fields, such as conductive / antistatic materials, battery electrode materials, electromagnetic shielding, solar thin film batteries, thermal insulation materials and so on. However, one of its existing problems, the conductivity is not good enough, so it is necessary to further improve the conductivity of tin oxide based conductive materials. At present, the research of tin oxide based conductive materials mainly lies in the single element doping, but the double doping is seldom studied. In this paper, fluorophosphorus-co-doped tin dioxide (FPTO) powders and their transparent thin films were prepared by sol-gel method. The effects of preparation conditions on the conductive properties of the materials were studied, and the more suitable preparation conditions were determined. The main results are as follows: (1) with SnCl2 2H2O, CH3CH2OH, (HF) and H3PO4 as raw materials, good conductivity of FPTO powder was prepared by sol-gel method. The doping amount, water bath temperature and water bath time were studied. The effect of calcination temperature on the conductivity of FPTO was studied. The optimum preparation parameters were determined as follows: fluorine content is about 15%, phosphorus content is about 25%, Sn concentration is 0.4 mol / L, and water bath temperature is 70 鈩，
本文编号：2241247
[Abstract]:Tin dioxide with wide band gap semiconductor properties, after doping elements, has excellent electrical and optical properties, high melting point, light color, high oxidation resistance, acid and alkali resistance, The advantages of low toxicity are widely used in many fields, such as conductive / antistatic materials, battery electrode materials, electromagnetic shielding, solar thin film batteries, thermal insulation materials and so on. However, one of its existing problems, the conductivity is not good enough, so it is necessary to further improve the conductivity of tin oxide based conductive materials. At present, the research of tin oxide based conductive materials mainly lies in the single element doping, but the double doping is seldom studied. In this paper, fluorophosphorus-co-doped tin dioxide (FPTO) powders and their transparent thin films were prepared by sol-gel method. The effects of preparation conditions on the conductive properties of the materials were studied, and the more suitable preparation conditions were determined. The main results are as follows: (1) with SnCl2 2H2O, CH3CH2OH, (HF) and H3PO4 as raw materials, good conductivity of FPTO powder was prepared by sol-gel method. The doping amount, water bath temperature and water bath time were studied. The effect of calcination temperature on the conductivity of FPTO was studied. The optimum preparation parameters were determined as follows: fluorine content is about 15%, phosphorus content is about 25%, Sn concentration is 0.4 mol / L, and water bath temperature is 70 鈩，
本文编号：2241247
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