钼圆片表面磁控溅射镀镍薄膜的工艺、结构及性能研究

发布时间：2018-04-04 16:51

  本文选题：钼圆片　切入点：镍薄膜　出处：《武汉科技大学》2016年硕士论文

【摘要】：钼及钼合金具有良好的导电导热性、低热膨胀系数、高温强度和耐磨损等特性,使其在宇航、电子、化工等领域广泛应用。但是钼的抗氧化能力很差,容易在空气中氧化,且生成的氧化物无法对钼起到任何保护作用。钼表面镀一层镍薄膜能够有效的起到保护作用,能够增强表面抗氧化以及耐蚀性等。目前,在钼圆片表面镀镍膜主要有电镀和化学镀,但其使用到的化学液对环境会产生污染,且镀覆过程稳定性较差。利用磁控溅射技术在钼圆片表面制备镍薄膜,过程稳定、安全无污染,适当工艺参数下制得的薄膜结构性能优异。本文研究了溅射功率、溅射气压、负偏压、沉积时间和沉积温度对钼圆片表面磁控溅射镀镍薄膜的影响,通过荧光测厚仪、百格法、扫描电镜、X射线衍射仪、平面度仪以及电化学工作站等手段对镀镍样品的形貌、结构及性能进行观察分析。结果表明:最佳磁控溅射镀镍薄膜工艺参数为:溅射功率1.8KW,溅射气压0.3Pa,负偏压450V,沉积温度200℃,沉积时间10min。此工艺下镍膜厚度为1.15um左右;薄膜与基体紧密连接,薄膜表面平整、连续、致密,表面起伏高度基本都在0.1μm左右;晶粒沿(111)晶面择优生长;相比未镀基片,最佳工艺参数镀镍样品的自腐蚀电流降低了一个数量级。针对钼圆片表面镀大膜厚(2μm以上)镍膜的薄膜附着力极差的问题,通过实验得到:对溅射镀镍样品进行氢气气氛下850℃,保温1h的热处理过程,镀层与基体会发生互相扩散渗透在界面处形成扩散层而明显增大薄膜的附着力。目前,该磁控溅射镀镍钼圆片已成功代替电镀镍钼圆片应用在晶闸管等电子器件上,并取得良好的应用效果。
[Abstract]:Molybdenum and molybdenum alloys have good thermal conductivity, low thermal expansion coefficient, high temperature strength and wear resistance, which make them widely used in aerospace, electronics, chemical industry and other fields.But molybdenum has poor oxidation resistance and is easy to be oxidized in air.Nickel coating on molybdenum surface can effectively protect the surface from oxidation and corrosion resistance.At present, there are mainly electroplating and electroless plating on the surface of molybdenum wafer, but the electroless solution will pollute the environment, and the stability of the plating process is poor.Nickel thin films were prepared on molybdenum wafer by magnetron sputtering technique. The process was stable, safe and pollution-free, and the structure and properties of the films were excellent under appropriate process parameters.The effects of sputtering power, sputtering pressure, negative bias voltage, deposition time and deposition temperature on nickel film deposited on the surface of molybdenum wafer by magnetron sputtering were studied.The morphology, structure and properties of nickel plating samples were observed and analyzed by means of flatness meter and electrochemical workstation.The results show that the optimum technological parameters are as follows: sputtering power 1.8 KW, sputtering pressure 0.3 Pa, negative bias voltage 450 V, deposition temperature 200 鈩，

本文编号：1710830