Si、Cu和热处理工艺对Al-Si合金电导率的影响

发布时间：2018-06-23 13:51

  本文选题：晶格畸变 + 电导率　； 参考：《稀有金属材料与工程》2015年11期

【摘要】：通过电导率测量、金相观察、扫描电镜分析和X射线衍射分析,研究了Si含量、Cu含量和热处理工艺对Al-Si系铸造合金晶格常数和电性能的影响规律。结果表明:Si和Cu元素的添加会减小合金的电导率;当Si含量超过固溶极限后,Si含量的变化对晶格畸变程度影响不大,合金的电导率受Si相的体积百分数控制;而Cu在固溶极限内时,随其含量的增加,晶格畸变程度增大,合金的电导率可根据铝基体晶格常数的偏离量来评估;经过450℃,5 h+250,2 h热处理工艺,晶格畸变程度明显降低,合金的电导率有明显提高,增幅最高可达32%。
[Abstract]:The effects of Si content, Cu content and heat treatment process on the lattice constants and electrical properties of Al-Si cast alloys were studied by means of electrical conductivity measurement, metallographic observation, scanning electron microscopy and X-ray diffraction analysis. The results show that the addition of% Si and Cu elements can decrease the electrical conductivity of the alloy, and the variation of Si content has little effect on the lattice distortion when the Si content exceeds the solution limit, and the conductivity of the alloy is controlled by the volume percentage of Si phase. However, when Cu is within the solution limit, the degree of lattice distortion increases with the increase of the content of Cu, the conductivity of the alloy can be evaluated according to the deviation of the lattice constant of the aluminum matrix, and the degree of lattice distortion decreases obviously after heat treatment at 450 鈩，

本文编号：2057325