翻边压电晶片激励Lamb波声场研究
发布时间：2018-09-13 13:21
【摘要】：压电晶片广泛应用于超声波检测领域,是激励和接收超声波的最主要器件之一。本文用实验、有限元压电模拟和半解析数值模拟方法,研究翻边压电晶片在板中激励Lamb波声场。三种方法得到的Lamb波信号吻合性好,仅A0模式由于频散有少量差异。同时分析了翻边电极面积对声场分布以及声场能量的影响。翻边电极造成了Lamb波声场不对称,减少了声场的能量,同时降低了压电晶片的电容、机电耦合系数和品质因子等参数。
[Abstract]:Piezoelectric wafer is widely used in ultrasonic detection field, and it is one of the most important devices to excite and receive ultrasonic wave. In this paper, the acoustic field of Lamb wave excited by a flanged piezoelectric wafer in a plate is studied by means of experiments, finite element piezoelectric simulation and semi-analytical numerical simulation. The Lamb signals obtained by the three methods are in good agreement with each other, but only the A0 mode has a little difference due to dispersion. At the same time, the influence of flanging electrode area on sound field distribution and sound field energy is analyzed. The flanging electrode causes the asymmetry of Lamb wave sound field, reduces the energy of sound field, and reduces the parameters such as capacitance, electromechanical coupling coefficient and quality factor of piezoelectric wafer.
【作者单位】： 江苏科技大学数理学院;
【分类号】：TG115.285
本文编号：2241295
[Abstract]:Piezoelectric wafer is widely used in ultrasonic detection field, and it is one of the most important devices to excite and receive ultrasonic wave. In this paper, the acoustic field of Lamb wave excited by a flanged piezoelectric wafer in a plate is studied by means of experiments, finite element piezoelectric simulation and semi-analytical numerical simulation. The Lamb signals obtained by the three methods are in good agreement with each other, but only the A0 mode has a little difference due to dispersion. At the same time, the influence of flanging electrode area on sound field distribution and sound field energy is analyzed. The flanging electrode causes the asymmetry of Lamb wave sound field, reduces the energy of sound field, and reduces the parameters such as capacitance, electromechanical coupling coefficient and quality factor of piezoelectric wafer.
【作者单位】： 江苏科技大学数理学院;
【分类号】：TG115.285
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