升温速率对超高纯Al-0.5%Cu合金再结晶行为和微观组织的影响
发布时间：2018-10-10 10:52
【摘要】：本文以电子行业广泛使用的超高纯溅射靶材Al-0.5%Cu合金为研究对象,采用不同退火工艺以改善Al-0.5%Cu合金的微观组织从而优化靶材性能。对冷轧90%变形量的超高纯Al-0.5%Cu采用慢速升温(空气炉)和快速升温(油浴)两种退火工艺进行退火,退火温度为200℃-300℃,退火时间为2.5min-80min。通过电子通道衬度像(ECC)、电子背散射衍射技术(EBSD),X射线衍射(XRD)结合显微硬度等综合分析手段,研究了不同退火工艺对超高纯Al-0.5%Cu合金靶材再结晶温度、微观组织和再结晶行为的影响。本论文的主要结论如下:①快速升温退火再结晶温度为225℃,慢速升温退火再结晶温度为250℃。快速升温退火能够降低超高纯Al-0.5%Cu的再结晶温度。②升温速率影响再结晶晶粒尺寸和织构:慢速升温退火再结晶晶粒平均尺寸为23.7±17.5μm,而快速升温退火为18.6±13.7μm,快速升温退火细化再结晶晶粒,使晶粒分布更细小均匀;快速升温退火形成随机织构。③慢速升温退火再结晶激活能为81.31 KJ/mol,快速升温退火再结晶激活能为64.26 KJ/mol,快速升温退火降低超高纯Al-0.5%Cu的再结晶激活能。④慢速升温退火工艺制度应采用250℃-80min,快速升温退火采用225℃-80min。
[Abstract]:In this paper, the ultrahigh purity sputtering target Al-0.5%Cu alloy widely used in electronic industry is studied. Different annealing processes are used to improve the microstructure of Al-0.5%Cu alloy and optimize the properties of the target. The ultra-high purity Al-0.5%Cu with 90% deformation of cold rolling was annealed by two kinds of annealing processes: slow heating (air furnace) and rapid heating (oil bath). The annealing temperature was 200 鈩，
本文编号：2261496
[Abstract]:In this paper, the ultrahigh purity sputtering target Al-0.5%Cu alloy widely used in electronic industry is studied. Different annealing processes are used to improve the microstructure of Al-0.5%Cu alloy and optimize the properties of the target. The ultra-high purity Al-0.5%Cu with 90% deformation of cold rolling was annealed by two kinds of annealing processes: slow heating (air furnace) and rapid heating (oil bath). The annealing temperature was 200 鈩，
本文编号：2261496
本文链接：https://www.wllwen.com/kejilunwen/jinshugongy/2261496.html
教材专著
