室温下制备非晶ZnO薄膜及其电阻开关特性研究

发布时间：2018-01-07 20:00

本文关键词：室温下制备非晶ZnO薄膜及其电阻开关特性研究　出处：《无机材料学报》2014年11期 　论文类型：期刊论文

【摘要】：室温下采用紫外固化的方法取代溶胶凝胶方法中的高温退火制备了氧化锌薄膜,XRD分析结果表明薄膜为非晶的,XPS分析结果表明薄膜的主要成分是ZnO。在深紫外固化后的薄膜表面溅射Al作为顶电极获得Al/a-ZnO/FTO结构的器件,研究深紫外照射时间对器件电阻转变性能的影响,进一步解释了深紫外固化的机制。研究表明:经过充足时间(12h)照射的器件表现出双极性电阻开关特性,阈值电压分布集中( 3.7 VVset 2.9 V,3.4 VVreset4.3 V)且符合低电压工作的要求,至少在4000 s内器件的高低阻态都没有发生明显的退化,表现出了良好的存储器特性。Al/a-Zn O/FTO器件的这种电阻转变特性可以用空间电荷限制电流传导机制解释。
[Abstract]:ZnO thin films were prepared by UV curing at room temperature instead of high temperature annealing in sol-gel method. The results of XRD analysis showed that the films were amorphous. The results of XPS analysis show that the main component of the film is ZnO.The sputtering Al on the surface of the thin film after deep UV curing is used as the top electrode to obtain the Al/a-ZnO/FTO structure device. The influence of the external irradiation time of deep violet on the resistance transition performance of the device was studied. The mechanism of deep UV curing is further explained. It is shown that the device irradiated with sufficient time (12 h) exhibits bipolar resistance switch characteristics. The distribution of threshold voltage is concentrated (3. 7 VVset / 2. 9 V / 3. 4 VVreset4.3 / V) and meets the requirement of low voltage operation. At least 4000s, the high and low resistance states of the devices did not degenerate obviously. The resistive transition characteristics of Alra-Zn / FTO devices can be explained by the space-charge-limited current conduction mechanism.
【作者单位】：华中科技大学光学与电子信息学院;
【基金】：国家自然科学基金重点项目(61076042)~~
【分类号】：TP333;TN304.21
【正文快照】： 近年来,阻变存储器作为一种新型的非易失性存储器受到了学术界和工业界的广泛关注。这种存储器具有存储速度快,功耗低,结构简单,可高密度集成等优点,集合了动态存储器的成本优势、静态存储器的高速读写和闪存的非易失性的特点,有望成为下一代新型通用存储器[1]。目前许多材料

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