静态随机存储器总剂量辐射损伤的在线与离线测试方法

发布时间：2018-01-12 15:37

本文关键词：静态随机存储器总剂量辐射损伤的在线与离线测试方法　出处：《物理学报》2014年08期 　论文类型：期刊论文

【摘要】：以静态随机存储器为研究对象,对其在线和离线测试下的总剂量辐射损伤规律进行了研究,探寻了两种测试条件下总剂量损伤的差异并对造成差异的物理机制进行了分析和讨论,研究结果表明:由于静态随机存储器存在多种总剂量失效模式,相对于在线测试只能覆盖存储单元固定错误的一种失效模式,离线测试可覆盖多种功能失效模式;由于信号完整性对测试频率的限制,使得在线测试得到的动态功耗电流值要明显小于离线测试得到的动态功耗电流值;由于"印记效应"的存在,在线测试静态功耗电流小于离线测试中器件存储与辐照相反数据时的静态功耗电流值;在线无法测量的一些电参数,有可能先于在线可测参数而失效,这些研究结果对于静态随机存储器在星用辐射环境下的总剂量辐射损伤规律的研究和实验评估具有重要意义。
[Abstract]:Taking static random access memory (SRAM) as the research object, the law of total dose radiation damage under on-line and off-line test was studied. The difference of total dose damage under two test conditions is explored and the physical mechanism of the difference is analyzed and discussed. The results show that there are many total dose failure modes in static random access memory. Compared with online testing, it can only cover one failure mode of memory cell fixed error, while off-line test can cover a variety of functional failure modes. Because of the limitation of signal integrity to the test frequency, the dynamic power current obtained by on-line testing is obviously smaller than that obtained by off-line testing. Due to the existence of "imprint effect", the static power consumption current in on-line testing is smaller than that in off-line testing when the device stores the data opposite to the irradiated data. Some electrical parameters that can not be measured online may fail before on-line measurable parameters. These results are of great significance for the study and experimental evaluation of total dose radiation damage of static random access memory in satellite radiation environment.
【作者单位】：新疆理化技术研究所中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室;中国科学院大学;
【分类号】：TP333.8
【正文快照】： 试与在线测试.x弓|f 离线测试是指利用大规模集成电路自动测试P 设备(ATE),在不同的累积剂量点对器件进行工静态随机存储器(SRAM)是数字处理、信息处业标准的全参数测试,根据参数测试结果是否在器理、自动控制设备中的重要组成部件,被广泛应用件正常工作范围内来判定器件能

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