质子与金属布线层核反应对微纳级静态随机存储器单粒子效应的影响分析

发布时间：2018-01-28 18:29

本文关键词： 质子核反应微纳级静态随机存储器单粒子效应　出处：《物理学报》2015年17期 　论文类型：期刊论文

【摘要】：金属布线层对微纳级静态随机存储器(static random access memory,SRAM)质子单粒子效应敏感性的影响值得关注.利用Geant4针对不同能量(30 MeV,100 MeV,200 MeV和500 MeV)的质子与微纳级SRAM器件的核反应过程开展计算,研究了核反应次级粒子的种类、线性能量传输值(linear energy transfer,LET)及射程情况,尤其对高LET值的核反应次级粒子及其射程开展了详细分析.研究表明,金属布线层的存在和质子能量的增大为原子序数大于或等于30的重核次级粒子的产生创造了条件,器件体硅区中原子序数大于60的重核离子来源于质子与钨材料的核反应,核反应过程中的特殊作用机理会生成原子序数在30至50之间的次级粒子,且质子能量的增大有助于这种作用机理的发生,原子序数在30至50之间的次级粒子在器件体硅区的LET值最大约为37 MeV·cm~2/mg,相应射程可达到几微米,对于阱深在微米量级的微纳级SRAM器件而言,有引发单粒子闩锁的可能.研究结果为空间辐射环境中宇航器件的质子单粒子效应研究提供理论支撑.
[Abstract]:The metal wiring layer is static random access memory for micro and nano level static random access memory. The effect of SRAM on the sensitivity of single particle effect of proton is worthy of attention. Geant4 is used to target 30 MeV ~ (10) MeV of different energy. The nuclear reaction processes of protons and nanoscale SRAM devices with 200 MeV and 500MeV) were calculated and the types of secondary particles in the reaction were studied. Linear energy transfer and range. In particular, a detailed analysis of the secondary particles of nuclear reaction with high LET value and their range is carried out. The existence of metal wiring layer and the increase of proton energy create conditions for the generation of heavy nuclear secondary particles whose atomic number is greater than or equal to 30. The heavy nuclear ions with atomic number greater than 60 in bulk silicon region come from the nuclear reaction between proton and tungsten material. The special mechanism of nuclear reaction will produce secondary particles with atomic number between 30 and 50. The increase of proton energy contributes to this mechanism. The maximum LET value of secondary particles with atomic number between 30 and 50 is about 37 MeV 路cm~2/mg in the silicon region of the device. The corresponding range can reach several microns, for micro-nano SRAM devices with well depth in the order of micron. It is possible to trigger single particle latch. The results provide theoretical support for the study of proton single particle effect in space radiation environment.
【作者单位】：强脉冲辐射环境模拟与效应国家重点实验室西北核技术研究所;
【基金】：国家自然科学基金青年科学基金(批准号:11175271) 国家科技重大专项(批准号:2014ZX01022-301)资助的课题~~
【分类号】：TP333
【正文快照】： 1引言宇宙空间中存在大量高能质子,高能质子穿透航天器屏蔽层进入到内部电子学系统,与系统中的半导体器件发生相互作用产生单粒子效应,影响航天器的在轨可靠运行[1-13].质子与半导体器件发生核反应生成的次级粒子的电离作用是引起质子单粒子效应的主要因素[7-13],虽然核反应截

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