65nm NOR Flash工艺整合技术研究

发布时间：2018-02-25 03:15

本文关键词： 65纳米 NOR闪存整合技术研究与改进　出处：《复旦大学》2013年硕士论文　论文类型：学位论文

【摘要】：1984年,东芝公司发明人Fujio Masuoka提出了快速闪存存储器这一概念。1988年Intel首先开发出NOR Flash技术后,闪存存储器其具有功耗低,读写快,容量大,成本低等优点,使得NOR和NAND成为了目前市场上两种主要的闪存产品,被广泛应用于各种嵌入式系统。随着消费者对产品的尺寸的要求越来越高,功能越来越强,越来越多,由此对加快提升芯片整合技术的能力,用来提高产品性价比成了目前制造业的主要任务和挑战。同时也带动了浮栅结构的非易失性存储器NOR Flash记忆体芯片的迅速成长。一直以来,半导体集成电路的发展都遵循着著名的Moore定律。即硅芯片集成的晶体管数目,每过18个月就会翻一倍。微电子器件尺寸都按比例在缩小,它带动了整个电子装备向小型化的方向发展。目前,业界对非易失性半导体存储器研发趋势主要是集中在两个方面,一方面是,研发应用新机理、新材料和新结构的全新存储技术；另一方面是,继续研发和改进发展主流的Flash存储技术,尽可能的向更小节点推进。NOR Flash现在技术已经开始进入了45nm NOR Flash的技术节点时代了,65nm NOR Flash大规模量产成为了现在市场的迫切需求。对制造行业来说要实现量产有很多的挑战,需要不断提升工艺的潜能来达到最大化的良率。本课题选择了65nm NOR Flash技术,进行了整合工艺的研究。本论文共分五章,首先大体上介绍存储器的发展和现状,然后对NOR Flash的基本结构和工作原理以及NOR Flash在生产工艺过程中遇到的问题理论分析；接着通过对65nm NOR Flash在工艺整合过程中实际遇到的问题进行分析,找到问题的源头；然后通过一些工艺上的调整和改进使产品无论在良率,质量和可靠性上都得以提高,实现大规模生产；最后是结论和对未来的存储器的展望。
[Abstract]:In 1984, Fujio Masuoka, inventor of Toshiba, put forward the concept of fast flash memory. After Intel first developed NOR Flash technology in 1988, flash memory has the advantages of low power consumption, fast reading and writing, large capacity and low cost. NOR and NAND have become two main flash memory products in the market, which are widely used in various embedded systems. This will speed up the enhancement of chip integration technology, It has become the main task and challenge of the manufacturing industry to improve the cost performance ratio of products. It has also led to the rapid growth of NOR Flash memory chips with floating gate structure. The development of semiconductor integrated circuits followed the famous law of Moore. That is, the number of transistors integrated on silicon chips doubled every 18 months. The size of microelectronic devices shrank proportionally. It has led the whole electronic equipment to the direction of miniaturization. At present, the trend of research and development of non-volatile semiconductor memory in the industry is mainly focused on two aspects. On the one hand, the new mechanism of research and development is applied. New storage technologies for new materials and new structures; on the other hand, continuing to develop and improve mainstream Flash storage technologies, Now that technology has entered the era of 45 nm NOR Flash, mass production of 65nm NOR Flash has become an urgent demand in the market. There are many challenges for the manufacturing industry to achieve mass production. It is necessary to improve the potential of the process to maximize the yield. In this paper, 65nm NOR Flash technology is chosen to study the integrated process. This paper is divided into five chapters. Firstly, the development and current situation of memory are introduced. Then the basic structure and working principle of NOR Flash and the problems encountered by NOR Flash in the process of production are analyzed theoretically, and then the problems encountered in the process integration process at 65nm NOR Flash are analyzed to find the source of the problems. Then through some process adjustment and improvement, the product can be improved in terms of yield, quality and reliability, and mass production can be realized. Finally, the conclusion and prospects for future memory are given.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

【共引文献】