基于SRAM型FPGA单粒子效应的故障传播模型

发布时间：2018-03-23 15:05

  本文选题：现场可编程门阵列　切入点：单粒子翻转　出处：《电子学报》2017年08期

【摘要】：SRAM型FPGA在辐射环境中易受到单粒子翻转的影响,造成电路功能失效.本文基于图论和元胞自动机模型,提出了一种针对SRAM型FPGA单粒子效应的电路故障传播模型.本文将单粒子翻转分为单位翻转和多位翻转来研究,因为多位翻转模型还涉及到了冲突处理的问题.本文主要改进了耦合度的计算方式,通过计算FPGA布局布线中的相关配置位,从而使得仿真的电路故障传播模型更接近于实际电路码点翻转的结果,与以往只计算LUT相关配置位的方法比较,平均优化程度为19.89%.最后阐述了本模型在故障防御方面的一些应用,如找出最易导致故障扩散的元胞.
[Abstract]:SRAM type FPGA is easily affected by single particle flip in radiation environment, which results in circuit failure. This paper is based on graph theory and cellular automata model. In this paper, a circuit fault propagation model for SRAM type FPGA single particle effect is proposed. Because the multi-bit flip model also involves the problem of conflict management, this paper mainly improves the calculation method of coupling degree, and calculates the relative configuration bits in FPGA layout and routing. Thus, the simulated circuit fault propagation model is closer to the result of the actual circuit code point flipping, and compared with the previous method which only calculates the LUT related configuration bit. The average degree of optimization is 19.89. Finally, some applications of this model in fault defense are described, such as finding out the cell that is the most likely to cause fault diffusion.
【作者单位】： 复旦大学专用集成电路与系统国家重点实验室;
【基金】：国家自然科学基金(No.61131001)
【分类号】：TP333
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本文编号：1653981