先进逻辑工艺下SRAM关键参数波动测试方法和性能以及RRAM在FPGA中应用研究

发布时间：2018-03-29 08:53

本文选题：嵌入式存储器　切入点：SoC　出处：《复旦大学》2012年硕士论文

【摘要】：随着逻辑工艺的发展,SOC得到了广泛的发展和应用。作为SOC最重要的组成部分嵌入式存储器,在SOC中所占的比重越来越大,一直是人们研究的重点。嵌入式存储器是按照功能划分主要分为挥发存储器和非挥发存储器。挥发存储器SRAM由于其读写速度的优势,应用在计算机高速缓存等高速部件中。65nm及其以下工艺,工艺波动对SRAM性能的影响日益增大。SRAM的读写指标能够反映SRAM性能的波动情况,是SRAM性能的关键参数。论文通过电路设计的方式得到SRAM读写指标。分别设计基于SRAM存储结点引出的测试结构和不引出存储结点的大阵列SRAM读写指标测试结构得到65nm下SRAM的读写指标,预测65nm SRAM阵列的良率,反映出65nm工艺波动对SRAM性能的影响,并在SMIC65nm上流片验证。由于EEPROM、Flash、antifuse等传统非易失存储器与标准逻辑工艺兼容性较差,不能很好的跟随工艺技术带缩小,在FPGA中应用受到了限制。新型非挥发存储器RRAM由于非挥发,体积小,与标准的CMOS逻辑工艺兼容,功耗小等优点得到了广泛的关注。新型存储器RRAM可以代替传统的非挥发存储器应用在FPGA:一是直接代PROM、EEPROM、闪存Flash等非挥发存储器,在上电的时候配置FPGA中挥发存储器SRAM。论文提出了一种单芯片结构中非挥发存储器RRAM和挥发存储器SRAM之间的通信方式,分析了通信电路。二是直接代替反熔丝Antifuse等编程结点,成为FPGA中开关编程结点。论文中通过设计RRAM-based2X2可编程逻辑模块来验证替代的可行性,重点研究了RRAM-based布线结构的编程算法,仿真其不同逻辑功能的实现,并在SMIC130nm上流片验证。
[Abstract]:With the development of logic technology, SOC has been widely developed and applied. As the most important component of SOC, embedded memory is becoming more and more important in SOC. Embedded memory is divided into volatile memory and non volatile memory according to its function. The volatile memory (SRAM) is used in the process of .65nm and below in the high speed parts such as computer cache because of its advantages of read and write speed. The influence of process fluctuation on the performance of SRAM is increasing day by day. The read and write index of SRAM can reflect the fluctuation of SRAM performance. It is the key parameter of SRAM performance. The SRAM read and write index is obtained by circuit design. The test structure based on SRAM storage node and the large array SRAM reading and writing index structure without SRAM memory node are designed respectively. The reading and writing index of SRAM under 65nm, The yield of 65nm SRAM array is predicted, which reflects the influence of 65nm process fluctuation on the performance of SRAM, and is verified by the upper flow sheet of SMIC65nm. Because of the poor compatibility between the traditional non-volatile memory and the standard logic process, the traditional non-volatile memory such as EEPROMU Flash antifuse can not be well followed by the process technology, so its application in FPGA is limited. The new non-volatile memory RRAM is small because of its non-volatile properties. The advantages of compatibility with standard CMOS logic process and low power consumption have attracted wide attention. The new memory RRAM can replace the traditional non-volatile memory in FPGA.First, it can directly replace the non-volatile memory such as PROMEEPROM, flash memory Flash and so on. In this paper, a single chip structure communication mode between non-volatile memory (RRAM) and volatile memory (SRAM) is proposed, and the communication circuit is analyzed. The second is to directly replace the anti-fuse Antifuse and other programming nodes, such as anti-fuse Antifuse, etc. In this paper, RRAM-based2X2 programmable logic module is designed to verify the feasibility of substitution. The programming algorithm of RRAM-based routing structure is studied, the realization of different logic functions is simulated, and the upper stream of SMIC130nm is verified.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333

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