铁酸铋薄膜在小于矫顽电压下的阻变机制

发布时间：2018-04-06 07:37

  本文选题：铁电阻变存储器　切入点：阻变效应　出处：《北京工业大学学报》2017年03期

【摘要】：为了研究利用脉冲激光沉积法制备于SrTiO_3衬底上的Au/BiFeO_3/SrRuO_3结构的阻变效应,实验通过测量样品的I-V特性曲线来表征样品的阻态变化.由于BiFeO_3与Au、SrRuO_3功函数的不同在Au/BiFeO_3、BiFeO_3/SrRuO_3两个接触界面形成稳定的肖特基接触,通过改变外部电压控制陷阱能级填充的程度可以改变肖特基势垒高度,从而在施加电压小于矫顽电压时可以形成稳定的高低阻变化,表现出最大可达103高低阻电流比的I-V特性曲线.对I-V特性曲线进行不同导电机制的拟合表明:小于矫顽电压下空间电荷限制电流起到了主导作用,陷阱的填充与脱陷是主要的阻变机制.
[Abstract]:In order to study the resistance effect of Au/BiFeO_3/SrRuO_3 structure prepared on SrTiO_3 substrate by pulsed laser deposition, the I-V characteristic curve of the sample was measured to characterize the resistance state change of the sample.Due to the difference between the work functions of BiFeO_3 and Au-SrRuOs, stable Schottky contacts can be formed at the two contact interfaces of Au/ BiFeO3BiFeO3BiFeO3BiFeO3. Schottky barrier height can be changed by changing the degree of filling of trap energy levels controlled by external voltage.Therefore, when the applied voltage is less than the coercive voltage, a stable high and low resistance variation can be formed, showing the I-V characteristic curve with the maximum high / low resistance current ratio of 103.By fitting the I-V characteristic curves with different conduction mechanisms, it is shown that the space charge limiting current plays a leading role when the voltage is smaller than the coercive voltage, and the trap filling and detrapping are the main resistance mechanisms.
【作者单位】： 北京工业大学电子信息与控制工程学院;复旦大学微电子学院;中国科学院半导体研究所光电子器件国家工程研究中心;
【基金】：国家自然科学基金资助项目(61201046) 北京市自然科学基金资助项目(4162013;2132023)
【分类号】：TP333;TB383.2
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本文编号：1718595