一种基于访存行为地址映射机制的混合内存系统

发布时间：2018-04-08 07:24

本文选题：相变存储器　切入点：混合内存　出处：《小型微型计算机系统》2014年06期

【摘要】：相变存储器(PCM)是一种高密度的新型存储器件,其数据读取性能与现有动态随机存储器(DRAM)相当且具有低功耗和按位寻址的特性,具备了替代DRAM的潜力,特别是应用在能量受限的移动计算系统中更能发挥优势.但是PCM在延迟和功耗方面存在读写不对称性,访问延迟大,写入功耗高且使用寿命受限.如何充分利用这一新型存储技术,通过存储结构的创新来实现计算机系统访存高性能和低功耗的目的,是研究的热点和重点.本文重点针对PCM的这些问题,提出了一种基于访存行为地址重映射机制MARM的PCM-DRAM混合内存系统.该内存系统将PCM和DRAM置于同一地址空间,以实时监测到的物理内存访问为基本依据,利用内存系统的物理地址重映射机制实现对PCM和DRAM物理页面的有效管理.实验表明,与传统的DRAM内存系统相比,基于MARM管理策略的PCM-DRAM混合内存系统可实现32%的功耗延时积收益.
[Abstract]:Phase change memory (PCM) is a new type of memory device with high density. Its data reading performance is comparable to that of existing dynamic random access memory (DRAM), and it has the characteristics of low power consumption and bit addressing, so it has the potential to replace DRAM.Especially, it can play a more important role in mobile computing systems with limited energy.However, the PCM has the asymmetry of reading and writing in terms of delay and power consumption, with large access delay, high write power consumption and limited service life.How to make full use of this new storage technology to realize the goal of high performance and low power consumption of computer system through the innovation of storage structure is a hot topic and key point of research.Aiming at these problems of PCM, this paper proposes a PCM-DRAM hybrid memory system based on memory access behavior address remapping mechanism (MARM).The memory system places PCM and DRAM in the same address space, based on the physical memory access monitored in real time, and realizes the effective management of PCM and DRAM physical pages by using the physical address remapping mechanism of the memory system.The experimental results show that compared with the traditional DRAM memory system, the PCM-DRAM hybrid memory system based on MARM management strategy can achieve 32% power delay product revenue.
【作者单位】：中国科学院微电子研究所;
【基金】：中国科学院战略性先导科技专项项目(XDA06020401)资助
【分类号】：TP333

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