基于明胶薄膜的阻变存储器的研究

发布时间：2018-05-02 13:04

  本文选题：阻变存储器 + 明胶　； 参考：《浙江大学》2017年硕士论文

【摘要】：阻变存储器是一种新型的具有双极性电阻开关特性的非易失性存储器,也称为忆阻器,以其结构简单、低功耗、高读写速度以及易于与其他电子器件集成的特性,展示了作为下一代存储器件的巨大潜力。相比于无机物,有机物具有易于成膜,种类多,成本低,且部分有机物基于生物可降解等特性,在未来的柔性电子器件中具有广阔的应用前景。本文主要通过对基于明胶的阻变存储器的制备与性能分析,通过工艺的优化,设计出性能良好的器件结构,对不同衬底、不同金属电极的器件进行制备与分析,得出明胶作为阻变存储器介质层材料的巨大潜力。具体的研究内容和成果如下:1、基于微纳电子平台,设计并优化了基于明胶Au/gelatin/Ag结构阻变存储器的工艺流程;对不同线宽的器件结构结果进行分析,得出了 70μm线宽器件结构为最佳;对金属掩膜版的调整,解决镀膜过程中器件形状不规整的问题。设计出一套成熟的阻变存储器制备工艺,对之后明胶存储器的研究奠定了良好的基础。2、成功制备W/gelatin/Mg结构阻变存储器,器件的开关电阻比达到了 104;通过导电原子力显微镜(C-AFM)测试,观察到器件高阻态与低阻态导电细丝的状况,对其阻变机理进行了研究与探讨;对同一器件超过80次重复性测试,证明器件具有稳定的开关比;对器件进行超过106s的测试,证明器件具有良好数据储存效应和可持续性能;对W/gelatin/Mg结构器件进行降解实验,表明其具有良好的降解特性。3、分析了不同工艺因素对W/gelatin/Mg结构阻变存储器性能的影响。通过对30～160nm厚度的明胶薄膜的器件的制备与测试,得出约80nm为明胶的最佳厚度;通过对105～140℃明胶薄膜烘烤温度器件的制备与测试,得出约105℃为明胶薄膜的最佳烘烤温度;通过对24～80℃测试温度下器件的I-V曲线分析得到,set电压随着温度的升高而降低,80℃时,器件失去阻变特性。4、证明基于明胶存储器的阻变特性属于明胶的固有属性。对Al/gelatin/Ag、Al/gelatin/Mg、W/gelatin/Mg 和 Au/gelatin/Mg 结构器件进行制备与分析,器件的阻变特性对电极种类依赖关系较小,较为稳定的金属底电极的器件具有较大的高阻态电阻;同时对玻璃、明胶、聚乳酸(pla)等衬底的器件的制备与分析,器件的阻变特性与衬底材料关系不大,粗糙度较大的器件具有较高的高阻态电阻,即具有较大的开关比。显示了明胶作为阻变存储器的介质层材料的广阔的应用前景。
[Abstract]:Resistive memory is a new type of non-volatile memory with bipolar resistance switch characteristics, also known as a resistor, because of its simple structure, low power consumption, high reading and writing speed and easy integration with other electronic devices. It shows the great potential as the next generation memory device. Compared with inorganic compounds, organic compounds have many advantages such as easy to form films, many kinds, low cost, and some organic compounds are based on biodegradability, so they will be widely used in flexible electronic devices in the future. In this paper, through the preparation and performance analysis of the resistance memory based on gelatin, the device structure with good performance is designed by optimizing the process, and the devices with different substrates and different metal electrodes are fabricated and analyzed. The great potential of gelatin as a dielectric layer material for resistive memory is obtained. The specific research contents and results are as follows: 1. Based on micro and nano electronic platform, the process flow of resistive memory based on gelatin Au/gelatin/Ag structure is designed and optimized, and the results of device structure with different linewidth are analyzed. It is concluded that the structure of 70 渭 m linewidth device is the best, and the adjustment of metal mask plate can solve the problem that the device shape is irregular in the process of coating. A set of mature fabrication process of resistive memory was designed, which laid a good foundation for the research of gelatin memory. The W/gelatin/Mg structure resistive memory was successfully fabricated. The switching resistance ratio of the device has reached 104. By means of the C-AFM test, the state of high resistance and low resistance conductive filament is observed, and the resistance mechanism is studied, and the repeatability of the same device is measured more than 80 times. It is proved that the device has a stable switching ratio, the device is tested for more than 106s, the device has good data storage effect and sustainability, and the degradation experiment of the W/gelatin/Mg structure device is carried out. It is shown that it has good degradation characteristics. 3. The influence of different process factors on the performance of W/gelatin/Mg structure resistive memory is analyzed. Through the preparation and test of gelatin film with 30~160nm thickness, the optimum thickness of gelatin film is about 80nm, and the optimum baking temperature of gelatin film is about 105 鈩，

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