一种邻近层资源共享的三维堆叠存储器内建自修复策略

发布时间：2018-05-05 20:09

本文选题：三维存储器 + 内建自修复　；参考：《计算机学报》2017年09期

【摘要】：在摩尔定律面临终结的趋势下,三维集成电路技术被认为是继续提升集成电路性能和集成度的重要技术途径之一.由于采用堆叠的结构,三维集成电路适用于高密度以及异质集成应用领域.存储器是高密度集成电路的典型代表,是三维集成电路的重要应用方向之一.三维存储器技术可同时提高存储密度与访存通路带宽,是解决"存储墙"问题的一种可行技术途径.然而,由于存储器件尺寸的微缩,存储阵列中的故障存储单元数量呈增加趋势.对存储器产品,基于冗余存储资源的内建自修复技术是提高其可靠性的重要方法.三维存储器的层与层之间可通过硅通孔等技术实现互连,使得垂直方向上的冗余资源共享成为可能,从而改善三维存储器的可靠性.该文提出一种邻近层共享冗余的三维存储器修复策略,用以提高现有三维存储器内建自修复技术的故障修复能力.该策略不会引发死锁现象,具有良好的冗余资源利用率和较小的硅通孔面积代价.仿真结果表明,与已有的结对冗余策略相比,该文所提出的冗余共享策略具有更高的故障修复率,且故障修复率不随存储器层数的增加而显著下降,更适用于大规模三维存储器.
[Abstract]:In the face of the end of Moore's law, 3D integrated circuit technology is considered as one of the most important ways to improve the performance and integration of integrated circuits. Because of the stacked structure, 3D integrated circuits are suitable for high density and heterogeneous integrated applications. Memory is a typical representative of high-density integrated circuits and one of the important applications of three-dimensional integrated circuits. Three-dimensional memory technology can increase both storage density and memory access bandwidth, which is a feasible way to solve the problem of "storage wall". However, the number of faulty memory cells in memory arrays tends to increase due to the microscale of memory devices. For memory products, built-in self-repair based on redundant storage resources is an important method to improve its reliability. The layers of 3D memory can be interconnected by silicon through hole technology, which makes it possible to share redundant resources in vertical direction, thus improving the reliability of 3D memory. In this paper, a 3D memory repair strategy based on shared redundancy of adjacent layers is proposed to improve the fault repair capability of existing 3D memory built-in self-repair techniques. This strategy does not cause deadlock, and has good redundancy resource utilization and smaller silicon through area cost. The simulation results show that the proposed redundancy sharing strategy has a higher fault repair rate than the existing pairing redundancy strategy, and the fault repair rate does not decrease significantly with the increase of memory layers. It is more suitable for large scale 3D memory.
【作者单位】：北京大学深圳研究生院集成微系统重点实验室;北京大学微纳电子研究院;
【基金】：国家“九七三”重点基础研究发展规划项目基金(2015CB057201) 广东省自然科学基金(2015A030313147) 深圳市基础研究项目(JCYJ20140417144423194,JCYJ20140417144423198)资助~~
【分类号】：TP333

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