基于多组分掺杂的柔性低电压有机场效应晶体管存储器的研究

发布时间：2018-05-13 21:16

本文选题：柔性低电压有机晶体管存储器 + 双浮栅存储　；参考：《南京邮电大学》2017年硕士论文

【摘要】：柔性低电压器件凭借其低能耗,低成本以及可大面积加工等优点已经引起了广泛的关注,存储器用作数据处理和信息存储已经成为电子系统的关键分支,因此柔性低电压有机场效应晶体管的研究对于电子领域的发展有着重要的影响。我们组已经可以在柔性衬底PET上成功实现低电压晶体管的制备。不过不同的介电层对器件电学性能有很大的影响,因此我们在原有组内工作基础之上,对晶体管的介电层材料以及晶体管的结构均作了详细的研究。在制备出性能较好的柔性低电压晶体管之后,我们尝试着在晶体管基础之上增加适当的存储材料来实现低电压存储。通过我们各种探索发现一些存储材料例如金属纳米粒子以及小分子半导体材料均可在低电压下实现正向存储,但很难在反向低电压下实现擦除过程;另一种光稳定剂有机物944在低电压可以实现负向存储,不过维持时间并不是很好。为了能够实现存储性能优越的存储器的制备,我们采用了两种存储材料来制备双浮栅柔性低电压场效应晶体管存储器。我们利用小分子半导体材料C60对电子的捕获作用,再利用另一种材料944对空穴的捕获作用,在擦除过程中944捕获的空穴与电子中和,从而成功地实现了可擦写非易失性闪存低电压存储器。紧接着我们对该存储器的机械稳定性作了一系列的研究,无论垂直沟道弯曲还是垂直沟道弯曲,其电学特性和存储特性均不会发生明显的衰减。
[Abstract]:Flexible low-voltage devices have attracted wide attention due to their advantages of low energy consumption, low cost and large area processing. Memory has become a key branch of electronic systems as data processing and information storage. Therefore, the research of flexible low-voltage field-effect transistors has an important impact on the development of electronic field. Our group has been able to successfully fabricate low voltage transistors on flexible substrate PET. However, different dielectric layers have a great influence on the electrical properties of the devices. Therefore, the dielectric layer materials and the structure of the transistors are studied in detail on the basis of the working in the original group. After the fabrication of flexible low-voltage transistors with good performance, we try to add appropriate storage materials to the transistors to realize low-voltage storage. We find that some storage materials such as metal nanoparticles and small molecular semiconductors can achieve forward storage at low voltage, but it is difficult to achieve erasure at low reverse voltage. Another light stabilizer, organic 944, can be used for negative storage at low voltage, but the retention time is not very good. In order to fabricate the memory with superior storage performance, two kinds of storage materials are used to fabricate the double floating gate flexible low-voltage field-effect transistor memory. We use the small molecular semiconductor material C60 to capture electrons, and another material, 944, to trap holes, and neutralize the holes and electrons captured by 944 during the erasing process. Thus the erasable non-volatile flash low voltage memory is successfully realized. Then we do a series of research on the mechanical stability of the memory. No matter the vertical channel bending or the vertical channel bending, the electrical and storage characteristics of the memory will not attenuate significantly.
【学位授予单位】：南京邮电大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386;TP333

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