金属纳米晶存储器材料和性能研究

发布时间：2018-05-15 09:39

本文选题：非易失性存储器 + 原子层淀积　；参考：《复旦大学》2013年硕士论文

【摘要】：非易失性快闪存储器在智能手机以及其它移动数码产品等方面具有广泛的应用,在最近几年得到了快速的发展。然而,传统的多晶硅浮栅存储器由于其固有的缺点,而无法满足业界对超高密度存储的需求。因此,开发下一代新型非易失性存储器已迫在眉睫。本论文基于分离式的电荷存储方式,结合新材料和先进工艺,研究了金属-绝缘体-半导体(MIS)结构以及薄膜晶体管(TFT)结构存储器件的性能,取得了如下研究结果：采用原子层淀积(ALD)方法在A1203薄膜表面生长铂纳米晶,研究了不同淀积循环数对纳米晶的大小和密度的影响。结果表明了,随着循环数的增加,纳米晶的体积变大,密度降低。接着,采用ALD原位生长的方法,在HfO2薄膜中嵌入单层或双层铂纳米晶,比较研究了铂纳米晶的引入对Hf02薄膜的退火温度导致的结晶程度的影响,表明了铂纳米晶的引入能有效抑制HfO2晶粒的增长。研究了基于Ru纳米晶和HfAlO介质为异质电荷俘获层的MIS结构的存储性能,比较了异质电荷俘获层中不同HfAlO介质组成对电学性能的影响。结果显示,采用异质电荷俘获层电容的存储特性明显优于单Ru纳米晶层。此外,随着异质电荷俘获层中HfO2成分增加,所得到的存储性能逐渐改善。当以Ru纳米晶/Hf02介质为异质电荷俘获层时,所得存储性能最好：在±9V的扫描电压范围内,CV滞回窗口达到12.6V；在±9V电压下编程/擦除100ms,其存储窗口可达4.5V,在室温下外推到十年仍有3.4V的存储窗口。采用磁控溅射技术制备了In-Ga-Zn-O (IGZO)薄膜,研究了淀积条件和后退火条件对该薄膜性能的影响。接着,采用A1203/铂纳米晶/A1203的栅堆栈结构,制备了基于IGZO沟道的薄膜晶体管(TFT)存储器,表现出良好的电可编程、紫外可擦除的功能。在10V下编程l00ms,阈值电压漂移达到4.04V,在紫外光照下擦除5s,阈值电压负向偏移达到6.31V。
[Abstract]:Nonvolatile flash memory has been widely used in smart phones and other mobile digital products, and has developed rapidly in recent years. However, traditional polysilicon floating gate memory can not meet the needs of ultra high density storage because of its inherent shortcomings. In this paper, the performance of metal insulator semiconductor (MIS) structure and thin film transistor (TFT) structure storage device is studied in this paper based on separate charge storage and new materials and advanced technology. The following results are obtained:
Platinum nanocrystals were grown on the surface of A1203 film by atomic layer deposition (ALD). The effect of different deposition cycles on the size and density of nanocrystalline was studied. The results showed that the volume of nanocrystalline and density decreased with the increase of the number of cycles. Then, the single or double layer platinum was embedded in the HfO2 film by the method of ALD growth. The effect of the introduction of the platinum nanocrystals on the crystallization of the Hf02 films was compared. The results showed that the introduction of platinum nanocrystals could effectively inhibit the growth of HfO2 grains.
The storage performance of the MIS structure based on the heterogeneous charge capture layer based on the Ru nanocrystalline and the HfAlO medium is studied. The effects of the composition of different HfAlO media on the electrical properties in the heterogeneous charge capture layer are compared. The results show that the storage characteristics of the heterogeneous charge capture layer capacitance are obviously superior to the single Ru nanocrystalline layer. In addition, with the heterogeneous charge capture layer. When the medium HfO2 component is increased, the storage performance is improved gradually. When the Ru nanocrystalline /Hf02 medium is a heterogeneous charge capture layer, the best storage performance is obtained: the CV hysteresis window reaches 12.6V within the range of the scanning voltage of the + 9V, and the 100ms is programmed / erased under the + 9V voltage, and the storage window is up to 4.5V, and there are still 3.4V in ten years outside the room temperature. The storage window.
In-Ga-Zn-O (IGZO) thin films were prepared by magnetron sputtering. The effects of deposition conditions and post annealing conditions on the properties of the thin film were studied. Then, the thin film transistor (TFT) memory based on IGZO channel was prepared by using A1203/ platinum nanocrystalline /A1203 gate stack structure. The function of good electrical programmable and UV Erasable function was shown in 10. V programming l00ms, threshold voltage drift to 4.04V, erasing 5S under UV light, threshold voltage negative offset to 6.31V.

【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333

【相似文献】