高速低功耗闪存关键模块研究

发布时间：2018-05-15 10:11

本文选题：闪存 + 灵敏放大器　；参考：《复旦大学》2012年硕士论文

【摘要】：闪存是高端消费类电子产品必备的器件之一,广泛应用在个人电脑、手机、数码相机等产品中。随着闪存读写频率的不断提高,以及闪存单元特征尺寸的不断减小,闪存的稳定性,以及能否突破速度瓶颈从而提高性能面临着巨大的挑战。除了开发更先进的工艺制程和先进的存储单元外,闪存关键电路的设计成为能否突破速度瓶颈的关键。本文结合项目的工程实际问题,在阐述闪存单元结构和工作原理的基础上,基于当今主流的闪存芯片架构,通过优化对闪存性能具有至关重要影响的关键外围电路模块,包括灵敏放大器,电荷泵系统,以及带隙基准源,从而实现闪存系统的高速低功耗设计。核心电路模块的灵敏放大器设计中我们采用了多相位预充技术和新型钳位电路来提高闪存读取速度；电荷泵系统中采用漏电探测模块来实现闪存的高速低功耗设计；采用了双带隙基准源的设计以实现参考源的高速和低功耗要求。本项目基于宏力半导体制造工艺设计了一个64Mb的NOR型Flash芯片。各关键模块均通过Hspice前仿和后仿,达到了设计要求。
[Abstract]:Flash memory is one of the necessary devices in high-end consumer electronics. It is widely used in personal computers, mobile phones, digital cameras and other products. With the increasing of the read and write frequency of flash memory and the decreasing of feature size of flash memory, the stability of flash memory and whether it can break through the speed bottleneck and improve the performance are facing great challenges. In addition to the development of more advanced processes and advanced memory cells, flash memory key circuit design becomes the key to breaking through the speed bottleneck. In this paper, on the basis of expatiating the structure and working principle of flash memory unit, based on the current mainstream architecture of flash memory chip, we optimize the key peripheral circuit modules which have an important impact on the performance of flash memory. It includes sensitive amplifier, charge pump system and bandgap reference source to achieve high speed and low power design of flash memory system. In the design of sensitive amplifier of core circuit module, we adopt multi-phase precharge technology and new clamp circuit to improve the reading speed of flash memory, and the leakage detection module is used to realize the design of high speed and low power consumption of flash memory in charge pump system. A dual band gap reference source is designed to meet the high speed and low power requirements of the reference source. In this project, a 64Mb NOR Flash chip is designed based on the macro-force semiconductor manufacturing process. All the key modules have reached the design requirements through Hspice pre-and post-simulation.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2012
【分类号】：TP333

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