一种基于标准CMOS工艺的OTP存储器研制

发布时间：2018-05-21 01:22

本文选题：非易失性 + OTP存储器　；参考：《苏州大学》2013年硕士论文

【摘要】：本文基于eMemory公司的逻辑工艺OTP单元，设计了一个存储密度为1K×13bits的OTP存储器，数据宽度为16bits，工作电压范围为2V到5.5V，电源电压3V以上时读取时间不超过100ns，编程时间不超过30μs，读取电流不超过2mA，静态电流典型值为1μA。本文首先介绍了OTP存储器的发展背景和研究进展。然后分析了OTP存储单元的工作机制，，对比研究了两种存储阵列结构，完成了内核架构的设计。在电路设计方面，本文详细介绍了OTP存储器各功能模块的工作原理及设计方法，重点设计了电路电压产生模块，采用带隙基准电路来对电源电压进行校准得到读取电压，同时完成了对各个模块仿真与分析。接着本文根据设计原理图完成了整体电路的版图设计和整体电路的读写仿真。最后对整体设计过程中遇到的几个重点问题进行了分析和解决。本课题是在0.18μm标准CMOS工艺5V器件模型上完成的设计，目前国内较少报道。本次设计的OTP存储器IP在成本和工艺复杂度等方面都具有优势，而且可以满足2V到5.5V的电源电压工作范围。
[Abstract]:Based on the logical process OTP unit of eMemory Company, a OTP memory with storage density of 1K 脳 13bits is designed in this paper. The data width is 16 bits, the working voltage range is from 2 V to 5.5 V, the reading time is not more than 100 ns, the programming time is not more than 30 渭 s, the reading current is not more than 2 Ma, the typical static current is 1 渭 A. This paper first introduces the development background and research progress of OTP memory. Then, the working mechanism of OTP memory cell is analyzed, two storage array structures are compared and the kernel architecture is designed. In the aspect of circuit design, this paper introduces the working principle and design method of each function module of OTP memory in detail. The circuit voltage generation module is designed emphatically. The bandgap reference circuit is used to calibrate the power supply voltage to get the read voltage. At the same time, the simulation and analysis of each module are completed. Then, according to the schematic diagram, the layout of the whole circuit and the simulation of the whole circuit are completed. Finally, several key problems encountered in the whole design process are analyzed and solved. The design of 5V device model based on 0.18 渭 m standard CMOS process is presented in this paper. The OTP memory IP designed in this paper has advantages in cost and process complexity, and can meet the operating range of 2V to 5.5V power supply voltage.
【学位授予单位】：苏州大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333;TN402

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