基于FPGA的MRAM特性测试系统

发布时间：2018-05-24 07:06

本文选题：磁阻随机存储器 + 特性数据采集　；参考：《计算机研究与发展》2015年S2期

【摘要】：由于传统的磁盘甚至已广泛应用的Flash固态盘已无法很好地满足当前对存储器在集成度、读写速度、可靠性方面的需求,故须积极寻找新一代存储介质尝试与当前存储器混合使用甚至替代之.而磁阻随机存储器(magnetic random access memory,MRAM)作为一种非易失性存储器,拥有静态随机存储器(satic random access memory,SRAM)的高速读取写入能力,以及动态随机存储器(dynamic random access memory,DRAM)的高集成度,同时比DRAM更低的能耗,并具有无限的读写次数,这些优秀的特性使得MRAM拥有很好的潜力成为下一代主流存储介质.为了对MRAM的读写性能、功耗等有深入的理解,设计并实现了一个MRAM测试平台,完成对MRAM读写性能测试和特性数据采集.该测试平台主要由MRAM控制器设计、MRAM特性数据采集、读写性能测试3个方面组成,由MRAM控制器对MRAM芯片进行读写完成读写性能测试,采集MRAM在读、写、空闲等状态下的特性数据.实验表明,MRAM具有良好的读写性能和低功耗,有条件成为下一代主流存储介质.
[Abstract]:Because the traditional disk and even the widely used Flash solid disk is unable to meet the needs of memory in integration, reading and writing speed and reliability, it is necessary to actively seek a new generation of storage media to try to mix and even replace the current memory. And magnetic random access memory (M), M RAM), as a nonvolatile memory, has the ability to read and write at high speed of Satic random access memory (SRAM), and the high integration of dynamic random access memory (dynamic random access memory, DRAM), with lower energy consumption than DRAM, and unlimited reading and writing times. There is a good potential to become the main storage medium of the next generation. In order to understand the reading and writing performance of MRAM, power consumption and so on, a MRAM test platform is designed and implemented to complete the MRAM reading and writing performance test and characteristic data acquisition. The test platform is mainly designed by the MRAM controller, the MRAM characteristic data acquisition, and the reading and writing performance testing 3 aspects. It is composed of the MRAM controller to read and write performance test on MRAM chip and collect the characteristic data of MRAM in reading, writing and idle state. The experiment shows that MRAM has good reading and writing performance and low power consumption, and it has the condition to become the next generation of main storage medium.
【作者单位】：华中科技大学计算机科学与技术学院;武汉光电国家实验室(华中科技大学);信息存储教育部重点实验室(华中科技大学);
【基金】：国家自然科学基金项目(61300047) 湖北省自然科学基金项目(2015CFB315)
【分类号】：TP333

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