用于相变存储器的高效开关电容电荷泵

发布时间：2018-05-31 05:09

本文选题：电荷泵 + 输出电压自动调节　；参考：《微电子学》2015年03期

【摘要】：提出一种应用于相变存储器芯片的新型开关电容电荷泵。对于16位的相变存储器芯片,系统擦写时间大于100ns,电荷泵的驱动能力至少为60mA。相比于传统开关电容电荷泵,该电荷泵根据负载电流大小自动生成一个使能信号,该信号通过控制升压模块功率管的开启与关断来调节输出电压,最终将输出电压控制在一个允许的范围内波动。采用40nm CMOS工艺对电荷泵进行设计和仿真,结果表明在5mA负载时,电源效率为87%,输出纹波为2.84mV;负载电流从0mA变化到60mA时,电源效率皆高于82%;负载电流变化在300mA/μs时,输出瞬态响应时间为1.63μs,满足相变存储器芯片的使用要求。
[Abstract]:A novel switched capacitor charge pump for phase change memory chip is proposed. For the 16-bit phase change memory chip, the system writing time is more than 100ns, and the driving capacity of the charge pump is at least 60 Ma. Compared with the conventional switched capacitor charge pump, the charge pump automatically generates an enabling signal according to the load current, which adjusts the output voltage by controlling the switching off and opening of the booster module power tube. The output voltage is ultimately controlled to fluctuate within an allowable range. The charge pump is designed and simulated by 40nm CMOS process. The results show that the power efficiency is 87, the output ripple is 2.84 MV, the power efficiency is higher than 82when the load current changes from 0mA to 60mA, and the load current changes at 300mA/ 渭 s. The transient response time of output is 1.63 渭 s, which meets the requirement of phase change memory chip.
【作者单位】：中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室;
【基金】：国家重点基础研究发展计划(2010CB934300,2013CBA01900,2011CBA00607,2011CB932804) 国家自然科学基金资助项目(61076121,61176122,61106001,61261160500,61376006) 上海市科委资助项目(11DZ2261000,12nm0503701,12QA1403900,13ZR1447200,13DZ2295700) 国家集成电路重大专项(2009ZX02023-003)
【分类号】：TP333

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