新型非易失性存储器架构的缓存优化方法综述

发布时间：2018-06-28 12:33

本文选题：非易失性存储器 + 存储技术　；参考：《计算机研究与发展》2015年06期

【摘要】：随着半导体工艺的发展,处理器集成的片上缓存越来越大,传统存储器件的漏电功耗问题日益严峻,如何设计高能效的片上存储架构已成为重要挑战.为解决这些问题,国内外研究者讨论了大量的新型非易失性存储技术,它们具有非易失性、低功耗和高存储密度等优良特性.为探索spintransfer torque RAM(STT-RAM),phase change memory(PCM),resistive RAM(RRAM)和domainwall memory(DWM)四种新型非易失性存储器(non-volatile memory,NVM)架构缓存的方法,对比了其与传统存储器件的物理特性,讨论了其架构缓存的优缺点和适用性,重点分类并总结了其架构缓存的优化方法和策略,分析了其中针对新型非易失性存储器写功耗高、写寿命有限和写延迟长等缺点所作出的关键优化技术,最后探讨了新型非易失性存储器件在未来缓存优化中可能的研究方向.
[Abstract]:With the development of semiconductor technology, the on-chip buffer of processor integration becomes larger and larger, and the leakage power problem of traditional memory devices becomes more and more serious. How to design high energy efficiency on-chip memory architecture has become an important challenge. In order to solve these problems, researchers at home and abroad have discussed a large number of new non-volatile storage technologies, which have the advantages of non-volatile, low power consumption and high storage density. In order to explore the four methods of spintransfer torque RAM (STT-RAM) phase change memory (PCM (spintransfer torque RAM) resistive RAM (RRAM) and domainwall memory (DWM), the physical characteristics of non-volatile memory are compared with those of traditional memory devices, and the advantages and disadvantages and applicability of the architecture cache are discussed. This paper mainly classifies and summarizes the optimization methods and strategies of the architecture cache, and analyzes the key optimization techniques for the new non-volatile memory, such as high write power consumption, limited write life and long write delay. Finally, the possible research direction of new nonvolatile memory devices in the future buffer optimization is discussed.
【作者单位】：武汉大学计算机学院;软件工程国家重点实验室(武汉大学);东华理工大学软件学院;合肥工业大学计算机与信息学院;
【基金】：国家自然科学基金重点项目(91118003);国家自然科学基金面上项目(61170022,61373039) 国家自然科学青年基金项目(61402145) 高等学校博士学科点专项科研基金项目(2013014111002512) 安徽省自然科学青年基金项目(1508085QF138)
【分类号】：TP333

【参考文献】