SoC嵌入式Flash的内建自测试方法的研究与实现
发布时间：2018-08-09 07:44
【摘要】：现代社会是信息化的社会，信息化社会离不开对信息的存储，所以存储器在我们的生活中的应用越来越广泛。在SoC芯片中，存储器所占据的比重在逐渐增加。据估计，到2016年，SoC芯片总面积的95％以上将被嵌入式存储器所占据。在众多种类的存储器中，Flash作为一种非易失性存储器，以其掉电后仍能保持数据的特点倍受青睐。Flash存储器容量的不断增加，，集成度的不断提高，导致其缺陷越来越多，对其的测量也就越来越困难。此外，机台测试的费用由于SoC芯片管脚和速度的增加，变得越来越高昂。所以本文针对以上问题对SoC嵌入式Flash内建自测试方法进行了研究。 本论文首先介绍了Flash存储器的基本结构和工作原理，结合其结构和工作原理对存储器的固有故障和Flash的特有故障进行了分析和研究。固有故障包括：固定故障、转换故障和桥接故障等，特有故障包括：直流写(DC-Programming)、直流擦(DC-Erasure)和漏极干扰(DrainDisturbance)等。通过对这些故障产生机理的研究，有助于更好的对Flash进行测试。 其次，本论文对存储器的测试方法进行了深入的研究。主要分析了几种常见的存储器测试算法：MSCAN算法、Gallop算法、Checkboard算法和March及其衍生算法的复杂度和故障覆盖率。由于Flash存储器的特殊结构及访问机制，本文将Checkboard做了相应的改进以便将其应用到Flash存储器的测试中。最终本文确定以改进的Checkboard算法和March-FT算法作为Flash存储器的测试算法，并加以实现。最后，本文对并行接口测试、半并行接口测试和串行接口测试三种测试方案 进行了研究，最终选定串行接口测试方案作为本文的测试方案，该方案能够有效的降低机台测试的成本。结合之前研究的算法，本文设计并实现了Flash存储器的内建自测试电路。电路通过Modelsim进行了仿真和验证，确认了电路架构和功能的正确性。
[Abstract]:Modern society is an information society, information society can not do without the storage of information, so memory in our life is more and more widely used. In SoC chips, the proportion of memory is gradually increasing. It is estimated that more than 95% of the total area of SoC chips will be occupied by embedded memory by 2016. In many kinds of memory, Flash is a kind of non-volatile memory, because of its characteristics of keeping data after power down, the capacity of Flash memory is increasing and the integration level is increasing, which leads to more and more defects. The measurement of it becomes more and more difficult. In addition, the cost of testing the SoC chip due to the increase in pin and speed, has become more and more expensive. So this paper studies the method of SoC embedded Flash built-in self-test. In this paper, the basic structure and working principle of Flash memory are introduced, and the inherent fault of memory and the special fault of Flash are analyzed and studied in combination with its structure and working principle. Inherent faults include fixed fault, switching fault and bridge fault, and special faults include DC write (DC-Programming), DC brush (DC-Erasure), drain interference (DrainDisturbance) and so on. Through the study of the mechanism of these faults, it is helpful to test the Flash better. Secondly, the test method of memory is studied deeply in this paper. This paper mainly analyzes the complexity and fault coverage of several common memory testing algorithms: the memory test algorithm: the Gallop algorithm, the March algorithm and its derived algorithm. Because of the special structure and access mechanism of Flash memory, the Checkboard is improved in this paper in order to apply it to the test of Flash memory. Finally, the improved Checkboard algorithm and March-FT algorithm are selected as the test algorithm of Flash memory and implemented. Finally, this paper studies three test schemes: parallel interface test, semi-parallel interface test and serial interface test. Finally, the serial interface test scheme is selected as the test scheme of this paper. This scheme can effectively reduce the cost of machine testing. Combined with the previous algorithms, this paper designs and implements the built-in self-test circuit of Flash memory. The circuit is simulated and verified by Modelsim, and the correctness of the circuit structure and function is confirmed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333
本文编号：2173393
[Abstract]:Modern society is an information society, information society can not do without the storage of information, so memory in our life is more and more widely used. In SoC chips, the proportion of memory is gradually increasing. It is estimated that more than 95% of the total area of SoC chips will be occupied by embedded memory by 2016. In many kinds of memory, Flash is a kind of non-volatile memory, because of its characteristics of keeping data after power down, the capacity of Flash memory is increasing and the integration level is increasing, which leads to more and more defects. The measurement of it becomes more and more difficult. In addition, the cost of testing the SoC chip due to the increase in pin and speed, has become more and more expensive. So this paper studies the method of SoC embedded Flash built-in self-test. In this paper, the basic structure and working principle of Flash memory are introduced, and the inherent fault of memory and the special fault of Flash are analyzed and studied in combination with its structure and working principle. Inherent faults include fixed fault, switching fault and bridge fault, and special faults include DC write (DC-Programming), DC brush (DC-Erasure), drain interference (DrainDisturbance) and so on. Through the study of the mechanism of these faults, it is helpful to test the Flash better. Secondly, the test method of memory is studied deeply in this paper. This paper mainly analyzes the complexity and fault coverage of several common memory testing algorithms: the memory test algorithm: the Gallop algorithm, the March algorithm and its derived algorithm. Because of the special structure and access mechanism of Flash memory, the Checkboard is improved in this paper in order to apply it to the test of Flash memory. Finally, the improved Checkboard algorithm and March-FT algorithm are selected as the test algorithm of Flash memory and implemented. Finally, this paper studies three test schemes: parallel interface test, semi-parallel interface test and serial interface test. Finally, the serial interface test scheme is selected as the test scheme of this paper. This scheme can effectively reduce the cost of machine testing. Combined with the previous algorithms, this paper designs and implements the built-in self-test circuit of Flash memory. The circuit is simulated and verified by Modelsim, and the correctness of the circuit structure and function is confirmed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333
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本文编号：2173393
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