利用Geant4模拟研究中子在半导体中引发的单粒子翻转效应
发布时间：2018-08-09 19:06
【摘要】：静态随机存储器在反应堆中子辐射环境中会发生单粒子翻转(Single event upset,SEU)。钨和铜等重金属作为局部互联,在半导体中已得到广泛应用,这些重金属对中子在半导体中的单粒子翻转截面会产生影响。不同条件下单粒子翻转截面与临界能量的关系可作为器件设计和使用时的参考,利用Geant4对特定中子能谱在CMOS(Complementary metal oxide semiconductor)器件中的能量沉积进行模拟,给出特定能谱下翻转截面σ与临界能量Ec的关系:σ=exp[-18.7×Ec-32.3],其中能量单位为Me V,截面单位为cm2。并且模拟了1-14 Me V的单能中子在含有互联金属钨及不含钨的CMOS中的沉积能量及单粒子翻转截面,得出在1-14 Me V内单粒子翻转截面随中子能量而增大,且钨的存在会增加α粒子的产额,从而增大了1-3 Me V中子的单粒子翻转截面,而对4-14 Me V中子基本不会产生影响。
[Abstract]:Static random access memory (SRAM) occurs in reactor neutron radiation environment with single particle flip (Single event upsetSEU). Heavy metals, such as tungsten and copper, have been widely used in semiconductors as local interconnections. These heavy metals have an effect on the single particle transition cross section of neutrons in semiconductors. The relationship between the critical energy and the flip cross section of the ordered particles under different conditions can be used as a reference for the design and application of the device. The energy deposition of a specific neutron spectrum in a CMOS (Complementary metal oxide semiconductor) device is simulated by Geant4. The relation between the transition cross section 蟽 and the critical energy E c under a specific energy spectrum is given: 蟽 exp [-18.7 脳 Ec-32.3], where the energy unit is me V and the cross section unit is cm 2. The deposition energy and single particle flip cross section of 1-14 me V single energy neutrons in CMOS containing and without tungsten are simulated. The results show that the single particle flip cross section increases with neutron energy in 1-14 me V. The presence of tungsten increases the yield of 伪 particles, thus increasing the single particle turnover cross section of 1-3 me V neutrons, but has little effect on 4-14 me V neutrons.
【作者单位】： 北京大学物理学院核物理与核技术国家重点实验室;西北核技术研究所;
【基金】：国家自然科学基金(No.11235008;No.10979010)资助~~
【分类号】：TP333
本文编号：2175014
[Abstract]:Static random access memory (SRAM) occurs in reactor neutron radiation environment with single particle flip (Single event upsetSEU). Heavy metals, such as tungsten and copper, have been widely used in semiconductors as local interconnections. These heavy metals have an effect on the single particle transition cross section of neutrons in semiconductors. The relationship between the critical energy and the flip cross section of the ordered particles under different conditions can be used as a reference for the design and application of the device. The energy deposition of a specific neutron spectrum in a CMOS (Complementary metal oxide semiconductor) device is simulated by Geant4. The relation between the transition cross section 蟽 and the critical energy E c under a specific energy spectrum is given: 蟽 exp [-18.7 脳 Ec-32.3], where the energy unit is me V and the cross section unit is cm 2. The deposition energy and single particle flip cross section of 1-14 me V single energy neutrons in CMOS containing and without tungsten are simulated. The results show that the single particle flip cross section increases with neutron energy in 1-14 me V. The presence of tungsten increases the yield of 伪 particles, thus increasing the single particle turnover cross section of 1-3 me V neutrons, but has little effect on 4-14 me V neutrons.
【作者单位】： 北京大学物理学院核物理与核技术国家重点实验室;西北核技术研究所;
【基金】：国家自然科学基金(No.11235008;No.10979010)资助~~
【分类号】：TP333
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，本文编号：2175014
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