相变存储器的工艺集成与优化
发布时间：2018-08-09 19:16
【摘要】：相变随机存储器(Phase-Change Random Access Memory, PCRAM)是在纳米时代发展起来的,利用硫系化合物半导体Ge2Sb2Te5等材料的快速阻变和可逆相变过程来实现高速、高密度和低功耗的非易失性存储功能。相变存储器作为新型的非易失性存储器,其电学操作机理以及工艺集成方法与传统的非易失性存储器都有较为明显的差异。因此在真正实现大规模量产之前,对工艺结构的设计,工艺集成实施方法的优化以及相变材料的遴选都极为重要。本文通过模拟计算与实际工艺实验结果相结合,提出相变存储工艺实施的优化方案。主要包括以下几点： 1.相变单元工艺结构设计。对传统电极型、环形电极型、侧壁电极型等工艺结构进行分析与比较,从降低功耗、提高单元阵列密度和工艺可性等方面进行考量,提出在不同技术节点下的用于量产的最优化工艺方案。 2.相变薄膜的预处理以及工艺优化。相变薄膜的淀积工艺是整个相变存储器件制造的核心步骤。不同的相变薄膜在不同温度下的工艺特性都不尽相同,而相变材料在高温环境下与传统半导体绝缘材料黏附力较差等问题又都普遍存在。本文通过对工艺生产过程中出现的相变材料分层、剥落等现象进行分析研究,提出能够为工艺生产所用的预处理方案。 3.电极单元的工艺制备。电极区域的工艺步骤是整个相变存储器工艺制程中另一个核心技术。本文围绕垂直侧壁型电极淀积方案及传统电极优化方案展开研究,确立了完成两种电极的工艺优化方案及集成方法。 4.通过测试与失效分析相结合的方法分析相变单元失效的原因,并提出工艺优化方案。
[Abstract]:Phase-Change Random Access Memory (PCRAM) is developed in the nanoscale era. The fast, high density and low power consumption nonvolatile storage function is realized by the rapid resistance and reversible phase transition process of a sulfur based compound semiconductor Ge2Sb2Te5. Phase change memory is used as a new nonvolatile memory. It is very important for the design of the process structure, the optimization of the process integration implementation method and the selection of the phase change materials before the real large-scale mass production. The optimization scheme of phase change storage technology is put forward.
The process structure of 1. phase transformation unit is designed. The traditional electrode type, ring electrode type and side wall electrode type are analyzed and compared. From the aspects of reducing power consumption, improving unit array density and technological availability, the optimal process scheme for mass production under different technical nodes is proposed.
2. the pretreatment and process optimization of phase change films. The deposition of phase change films is the core step in the manufacture of the whole phase change memory. The process characteristics of the different phase change films are different at different temperatures, and the poor adhesion of the phase change materials to the traditional semiconductor material under high temperature is common. In this paper, the phenomena such as delamination and spalling of phase change materials in the process of production are analyzed and studied, and a pretreatment plan which can be used for process production is put forward.
The process of the 3. electrode unit is prepared. The process step of the electrode region is another core technology in the process process of the whole phase change memory. This paper studies the vertical side wall electrode deposition and the traditional electrode optimization, and establishes the optimization scheme and integration method for the completion of the two kinds of electrodes.
4. analyze the causes of failure of phase change unit by combining test and failure analysis, and propose process optimization plan.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333
本文编号：2175058
[Abstract]:Phase-Change Random Access Memory (PCRAM) is developed in the nanoscale era. The fast, high density and low power consumption nonvolatile storage function is realized by the rapid resistance and reversible phase transition process of a sulfur based compound semiconductor Ge2Sb2Te5. Phase change memory is used as a new nonvolatile memory. It is very important for the design of the process structure, the optimization of the process integration implementation method and the selection of the phase change materials before the real large-scale mass production. The optimization scheme of phase change storage technology is put forward.
The process structure of 1. phase transformation unit is designed. The traditional electrode type, ring electrode type and side wall electrode type are analyzed and compared. From the aspects of reducing power consumption, improving unit array density and technological availability, the optimal process scheme for mass production under different technical nodes is proposed.
2. the pretreatment and process optimization of phase change films. The deposition of phase change films is the core step in the manufacture of the whole phase change memory. The process characteristics of the different phase change films are different at different temperatures, and the poor adhesion of the phase change materials to the traditional semiconductor material under high temperature is common. In this paper, the phenomena such as delamination and spalling of phase change materials in the process of production are analyzed and studied, and a pretreatment plan which can be used for process production is put forward.
The process of the 3. electrode unit is prepared. The process step of the electrode region is another core technology in the process process of the whole phase change memory. This paper studies the vertical side wall electrode deposition and the traditional electrode optimization, and establishes the optimization scheme and integration method for the completion of the two kinds of electrodes.
4. analyze the causes of failure of phase change unit by combining test and failure analysis, and propose process optimization plan.
【学位授予单位】：复旦大学
【学位级别】：硕士
【学位授予年份】：2013
【分类号】：TP333
【参考文献】
相关期刊论文 前2条
1 梁爽;宋志棠;刘波;陈小刚;封松林;;相变存储器器件单元测试系统[J];半导体技术;2006年08期
2 刘波;宋志棠;封松林;;我国相变存储器的研究现状与发展前景[J];微纳电子技术;2007年02期
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