高性能柔性铁电型有机晶体管存储器的研究

发布时间：2018-08-17 15:05

【摘要】：信息产业是我国国民经济发展的支柱产业,其中,非易失性存储是该产业的核心组成部分。铁电型有机晶体管非易失性存储器(FE-OFET-NVM)具有非破坏性读取、长期数据存储、响应速度快,柔性可挠曲,工艺简单,低成本等优点,在便携式flash存储、集成电路、产品标签、物联网、柔性显示等领域有广泛的应用前景,有望成为下一代的新型存储器。铁电聚合物PVDF及P(VDF-Tr FE)是目前构筑FE-OFET-NVM最为常用的栅介质层材料。近十几年来,研究者通过开发高性能有机半导体和优化薄膜工艺技术,使基于PVDF或P(VDF-TrFE)的F E-OFET-NVM的性能获得了长足的进步。然而,目前仍然有两个关键问题限制了此类器件在产业化上的应用,即高的工作电压(±20~±80 V)和普遍较低的场效应迁移率(10-4~10-1 cm2/Vs)。在本文中,我们主要针对FE-OFET-NVM存在的以上两个关键问题展开了一系列的研究:(1)第一,首先对新型铁电聚合物P(VDF-Tr FE-CTFE)的铁电效应进行了研究,结果表明其具有高的剩余极化和低的矫顽电场,分别为13.6 mC/m2和14.8 MV/m;(2)第二,我们以P(VDF-TrFE-CTFE)作为栅介质层构建了基于Pentacene的FE-OFET-NVM,并且观测到了铁电存储迟滞行为,工作电压仅为±15 V,迁移率为10-4~10-3 cm2/Vs;(2)第三,通过UVO处理改善P(V DF-TrFE-CTFE)的表面特性,进而改善Pentacene的生长堆叠模式和结晶质量,有效地提高了FE-OFET-NVM的迁移率,最高达0.8 cm2/Vs;(4)第四,我们采用超薄AlOx作为P(VDF-TrFE-CTFE)/Pentacene之间的钝化层,进一步提高了器件的迁移率,最高为9.3 cm2/Vs,刷新了目前已报道的最高迁移率;(5)第五,通过缩放栅介质层的厚度和优化器件结构进一步降低了的FE-OFET-NVM的工作电压,为±4 V,刷新了目前已报道的最低工作电压。(6)最后,我们在柔性衬底上成功研制出了同时具有高迁移率和低电压工作的柔性FE-OFET-NV M;另外,该存储器在反复擦写、数据保存记忆能力和柔性机械耐久性等方面也表现出了优异的性能。
[Abstract]:The information industry is the pillar industry of the national economy development of our country, among which, the nonvolatile storage is the core part of the industry. Ferroelectric Organic Transistor (FE-OFET-NVM) has the advantages of non-destructive reading, long-term data storage, fast response, flexible flexure, simple process, low cost, etc., in portable flash storage, integrated circuit, product label, etc. Internet of things, flexible display and other fields have a wide range of applications, it is expected to become the next generation of new memory. Ferroelectric polymer PVDF and P (VDF-Tr FE) are the most commonly used gate dielectric layer materials for FE-OFET-NVM. In recent years, researchers have made great progress in the performance of F E-OFET-NVM based on PVDF or P (VDF-TrFE) by developing high performance organic semiconductors and optimizing thin film technology. However, there are still two key problems that limit the application of this kind of devices in industrialization, that is, high operating voltage (卤20 ~ 卤80 V) and generally low field effect mobility (10-4 ~ 10-1 cm2/Vs). In this paper, we mainly focus on the above two key problems of FE-OFET-NVM: (1) first, we study the ferroelectric effect of a new ferroelectric polymer P (VDF-Tr FE-CTFE). The results show that it has high remanent polarization and low coercive electric field (13.6 mC/m2 and 14.8MV / m) respectively. (2) in the second place, FE-OFET-NVM based on Pentacene is constructed by using P (VDF-TrFE-CTFE) as the gate dielectric layer, and the ferroelectric storage hysteresis behavior is observed. The working voltage is only 卤15 V, and the mobility is 10-4 渭 m ~ (-3) cm ~ (2 / V); (2) third, the surface properties of P (V DF-TrFE-CTFE are improved by UVO treatment, and the growth stacking mode and crystallization quality of Pentacene are improved, thus effectively increasing the mobility of FE-OFET-NVM, up to 0.8 cm ~ (2) / V _ (s); (4) fourth, We use ultra-thin AlOx as the passivation layer between P (VDF-TrFE-CTFE) / Pentacene, and further improve the mobility of the device, up to 9.3 cm ~ 2 / V _ s, which refreshes the highest mobility reported so far. (5) Fifth, By scaling the thickness of the gate dielectric layer and optimizing the device structure, the working voltage of FE-OFET-NVM is further reduced to 卤4 V, which refreshes the reported minimum operating voltage. (6) finally, We have successfully fabricated flexible FE-OFET-NV Ms with high mobility and low voltage working on flexible substrates. In addition, the memory has shown excellent performance in many aspects, such as repeated erasing, data storage and memory ability, flexible mechanical durability, etc.
【学位授予单位】：吉林大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP333

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