三维垂直型阻变存储器的特性、机理及其集成技术研究
发布时间：2018-09-07 15:04
【摘要】：三维(3D)器件集成和多值存储(MLC)单元是实现高密度数据存储的两项极具吸引力的技术。本文的实验研究分为两部分,首先成功制备了三层Ta2O5-x/TaOy/AlOx三维阻变随机存储器(3D RRAM),进行了电学特性的测试,并以温度影响导电离子运动的特性为基础,对三维阻变存储器器件的阻变机理进行了探究。实验结果表明三维器件中分别处于不同阻变层的三个垂直型器件单元表现出极好的一致性和极高的电学特性：大于1000倍的高低阻值的窗口,超过1010次循环的耐久性,在125℃下达到104s的数据保持时间。同时,四个组态的多值存储操作通过两种操作方式：控制电流方式(CCS)和控制电压方式(VCS)得以实现。其次,单元存储器制备成功之后,考虑到工业产品直接应用的是存储器阵列,而阵列密度的提高要受到两方面的制约：1)水平方向和垂直方向上的器件尺寸限制；2)三维器件中选通管的集成。所以本文在第二部分实验研究中,提出并成功制备了以碳纳米管(CNT)这一维材料作为端电极的新型三维阻变器件。电学测试表明集成了直径仅2.5nm的金属型CNT做电极的阻变器件可实现变阻现象。尤其,由于金属Sc和CNT呈近似欧姆接触,TaOy-CNT-Sc器件的I-V曲线与两个均为金属电极的同类器件近似一致。同时,得益于形成于金属/CNT和阻变材料/半导体型CNT接触面的肖特基势垒所导致的不对称载流子运动,利用半导体型CNT作为电极成功制备了不需外加选通管的阻变存储器,并对该器件进行了电学特性的测试和机理探究,研究结果可直接应用于高密度存储器阵列的制备过程中,解决了困扰阻变存储器阵列的串扰问题。
[Abstract]:Three-dimensional (3D) device integration and multi-valued storage (MLC) cells are two attractive techniques for high density data storage. The experimental research in this paper is divided into two parts. Firstly, three layers of Ta2O5-x/TaOy/AlOx three dimensional resistive random access memory (3D RRAM),) have been successfully fabricated to test the electrical properties, which are based on the effect of temperature on the movement of conducting ions. The resistance mechanism of three-dimensional resistive memory device is studied. The experimental results show that the three vertical elements in three dimensional devices with different resistive layers exhibit excellent consistency and extremely high electrical properties: windows with high and low resistance values greater than 1000 times, durability of more than 1010 cycles. The data retention time reached 104 s at 125 鈩，
本文编号：2228608
[Abstract]:Three-dimensional (3D) device integration and multi-valued storage (MLC) cells are two attractive techniques for high density data storage. The experimental research in this paper is divided into two parts. Firstly, three layers of Ta2O5-x/TaOy/AlOx three dimensional resistive random access memory (3D RRAM),) have been successfully fabricated to test the electrical properties, which are based on the effect of temperature on the movement of conducting ions. The resistance mechanism of three-dimensional resistive memory device is studied. The experimental results show that the three vertical elements in three dimensional devices with different resistive layers exhibit excellent consistency and extremely high electrical properties: windows with high and low resistance values greater than 1000 times, durability of more than 1010 cycles. The data retention time reached 104 s at 125 鈩，
本文编号：2228608
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