基于随机映射的相变内存磨损均衡方法
发布时间：2018-10-05 14:26
【摘要】：相变内存(PCM)是一种使用相变材料存储数据的内存技术,具有非易失、存储密度高、低能耗和扩展性强等优点,但也存在写操作次数有限的缺陷。为了克服该问题,近期的研究主要集中在优化写操作和磨损均衡技术2个方面,但这些技术对于快速磨损PCM并使之失效的恶意攻击还存在一定的缺陷。该文提出一种PCM磨损均衡方法,将内存分成2个层级,不同的层级拥有各自独立的地址随机映射表,不同层级的内存单元根据该表将逻辑地址转换为物理地址。同时,地址随机映射表根据不同层级的写操作次数阈值进行动态更新。该方法不仅实现了PCM的磨损均衡,而且能够抵御恶意磨损程序的攻击。实验表明:相比已有的3种磨损均衡方法,该方法的磨损均衡效果提升高达87.5%;同时,对性能的影响不超过6%,增加的存储开销不超过内存总体大小的1‰。
[Abstract]:Phase change memory (PCM) is a kind of memory technology which uses phase-change materials to store data. It has the advantages of non-volatile, high storage density, low energy consumption and strong expansibility, but it also has the defect of limited write operation times. In order to overcome this problem, recent studies have focused on two aspects: optimal write operation and wear equalization techniques, but these techniques still have some defects in the malicious attacks that quickly wear out and invalidate PCM. In this paper, a PCM wear equalization method is proposed, in which the memory is divided into two levels, and each level has its own random mapping table of addresses. The memory units of different levels translate the logical addresses into physical addresses according to this table. At the same time, the address random mapping table is dynamically updated according to the write number threshold of different levels. This method not only realizes the wear balance of PCM, but also can resist the attack of malicious wear program. The experimental results show that the wear equalization effect of this method is up to 87.5% compared with the existing three wear equalization methods, and the effect on performance is not more than 6, and the storage cost is less than 1 鈥，
本文编号：2253746
[Abstract]:Phase change memory (PCM) is a kind of memory technology which uses phase-change materials to store data. It has the advantages of non-volatile, high storage density, low energy consumption and strong expansibility, but it also has the defect of limited write operation times. In order to overcome this problem, recent studies have focused on two aspects: optimal write operation and wear equalization techniques, but these techniques still have some defects in the malicious attacks that quickly wear out and invalidate PCM. In this paper, a PCM wear equalization method is proposed, in which the memory is divided into two levels, and each level has its own random mapping table of addresses. The memory units of different levels translate the logical addresses into physical addresses according to this table. At the same time, the address random mapping table is dynamically updated according to the write number threshold of different levels. This method not only realizes the wear balance of PCM, but also can resist the attack of malicious wear program. The experimental results show that the wear equalization effect of this method is up to 87.5% compared with the existing three wear equalization methods, and the effect on performance is not more than 6, and the storage cost is less than 1 鈥，
本文编号：2253746
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