抗辐射SRAM的研究与设计
发布时间：2019-02-19 18:30
【摘要】：随着集成电路制造工艺的进步、特征尺寸的减小、工作电压的降低和工作频率的提高,各种辐射效应对半导体器件的影响变得越来越严重。静态随机存储器(SRAM)因具有速度快、功耗低等优点,被作为高速缓存广泛应用于航空航天领域,而空间中大量的高能粒子严重影响了SRAM的可靠性,对各种航天器的正常运行构成极大的威胁,因此,研究SRAM的抗辐射加固技术具有重大意义。本文在研究单粒子效应产生机理和已有加固技术的基础上,设计了一种新型的抗辐射加固存储单元——延时自恢复逻辑(DSRL),该单元同时对单粒子翻转(SEU)、单粒子瞬态(SET)和单粒子多节点翻转(SEMNU)三种单粒子效应进行了加固,并使用该单元以全定制方法设计了一款4Kbit大小的抗辐射加固SRAM。本文的主要工作如下:1.对空间辐射粒子的来源做了研究,详细分析了SEU、SET和SEMNU这三种单粒子效应的产生机理,总结了SRAM的常用加固技术以及不足之处。2.设计了一种新型的抗辐射存储单元DSRL,该单元基于SRL结构采用读写路径分离设计,并加入特殊的延时单元,使得该存储单元不仅可以在全状态下对SEU免疫,而且在读写状态时可滤除低于1ns的SET脉冲,并且对SEMNU具有较好的加固效果。对DSRL单元晶体管的参数做了详细的理论计算,模拟验证结果显示满足设计要求。3.设计了与DSRL单元匹配的外围电路并进行相应的加固,如在行列译码器中加入滤波单元对SET进行加固;对灵敏放大器进行了改进,使其灵敏度和可靠性更高;对存储单元进行了版图加固设计,拉大了SRAM单元敏感节点间的距离,并对NMOS管和PMOS管分别添加保护环,对SEMNU做了进一步的加固。最终以全定制方法完成整个SRAM的原理图设计和版图设计。4.使用AMS软件搭建数模混合仿真平台对设计的SRAM进行了完备的功能验证,并建立单粒子效应模型及评价体系,提取版图后的寄生参数,对DSRL单元的加固效果做了充分的后仿真验证。
[Abstract]:With the progress of IC manufacturing process, the decrease of characteristic size, the decrease of working voltage and the increase of working frequency, the effects of various radiation effects on semiconductor devices become more and more serious. Static random access memory (SRAM) is widely used in aerospace field because of its high speed and low power consumption. However, a large number of high-energy particles in space seriously affect the reliability of SRAM. It poses a great threat to the normal operation of various spacecraft, so it is of great significance to study the anti-radiation reinforcement technology of SRAM. In this paper, based on the study of the mechanism of single particle effect and the existing reinforcement technology, a new type of radiation resistant reinforcement memory cell, the delayed self-recovery logic (DSRL), is designed. The unit flips the single particle (SEU), at the same time. Single particle transient (SET) and single particle multi-node flip (SEMNU) are used to reinforce three kinds of single-particle effects. Using this element, an anti-radiation reinforcement SRAM. with the size of 4Kbit is designed by using the fully customized method. The main work of this paper is as follows: 1. In this paper, the origin of space radiation particles is studied, the mechanism of single particle effect of SEU,SET and SEMNU is analyzed in detail, and the common reinforcement techniques of SRAM and its shortcomings are summarized. 2. A novel anti-radiation storage unit (DSRL,) is designed, which is based on the SRL structure and is designed by the read-write path separation design, and the special delay unit is added, so that the memory unit can not only be immune to SEU in the whole state. In addition, the SET pulse below 1ns can be filtered out in reading and writing state, and it has better reinforcement effect on SEMNU. The parameters of DSRL unit transistors are calculated in detail, and the simulation results show that the parameters meet the design requirements. The peripheral circuit matching with the DSRL unit is designed and the corresponding reinforcement is carried out, for example, the filter unit is added to the column decoder to reinforce the SET, the sensitive amplifier is improved to make its sensitivity and reliability higher. The layout reinforcement design of the storage cell is carried out, the distance between the sensitive nodes of the SRAM unit is enlarged, and the protection rings are added to the NMOS tube and the PMOS tube, respectively, and the SEMNU is further strengthened. Finally complete the whole SRAM schematic design and layout design with the method of full customization. 4. The AMS software is used to build the digital-analog hybrid simulation platform to verify the function of the designed SRAM, and the single particle effect model and evaluation system are established to extract the parasitic parameters after layout. The reinforcement effect of DSRL element is fully verified by post-simulation.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP333
本文编号：2426749
[Abstract]:With the progress of IC manufacturing process, the decrease of characteristic size, the decrease of working voltage and the increase of working frequency, the effects of various radiation effects on semiconductor devices become more and more serious. Static random access memory (SRAM) is widely used in aerospace field because of its high speed and low power consumption. However, a large number of high-energy particles in space seriously affect the reliability of SRAM. It poses a great threat to the normal operation of various spacecraft, so it is of great significance to study the anti-radiation reinforcement technology of SRAM. In this paper, based on the study of the mechanism of single particle effect and the existing reinforcement technology, a new type of radiation resistant reinforcement memory cell, the delayed self-recovery logic (DSRL), is designed. The unit flips the single particle (SEU), at the same time. Single particle transient (SET) and single particle multi-node flip (SEMNU) are used to reinforce three kinds of single-particle effects. Using this element, an anti-radiation reinforcement SRAM. with the size of 4Kbit is designed by using the fully customized method. The main work of this paper is as follows: 1. In this paper, the origin of space radiation particles is studied, the mechanism of single particle effect of SEU,SET and SEMNU is analyzed in detail, and the common reinforcement techniques of SRAM and its shortcomings are summarized. 2. A novel anti-radiation storage unit (DSRL,) is designed, which is based on the SRL structure and is designed by the read-write path separation design, and the special delay unit is added, so that the memory unit can not only be immune to SEU in the whole state. In addition, the SET pulse below 1ns can be filtered out in reading and writing state, and it has better reinforcement effect on SEMNU. The parameters of DSRL unit transistors are calculated in detail, and the simulation results show that the parameters meet the design requirements. The peripheral circuit matching with the DSRL unit is designed and the corresponding reinforcement is carried out, for example, the filter unit is added to the column decoder to reinforce the SET, the sensitive amplifier is improved to make its sensitivity and reliability higher. The layout reinforcement design of the storage cell is carried out, the distance between the sensitive nodes of the SRAM unit is enlarged, and the protection rings are added to the NMOS tube and the PMOS tube, respectively, and the SEMNU is further strengthened. Finally complete the whole SRAM schematic design and layout design with the method of full customization. 4. The AMS software is used to build the digital-analog hybrid simulation platform to verify the function of the designed SRAM, and the single particle effect model and evaluation system are established to extract the parasitic parameters after layout. The reinforcement effect of DSRL element is fully verified by post-simulation.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TP333
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