非挥发性电荷俘获存储器设计及其电离辐射可靠性研究
发布时间：2019-04-24 20:54
【摘要】：宇宙环境中存在的总剂量辐射及单粒子辐射会导致闪存芯片存储单元信息丢失和闪存芯片功能失效。基于分立电荷存储机制的电荷俘获型SONOS存储器件与传统浮栅器件相比具有更好的抗辐射能力，在空间环境中具有广阔的应用前景。本论文对SONOS存储单元及闪存电路的辐射特性、退化机理以及加固设计方法进行了深入的研究，研制出了满足空间应用要求的抗辐射非挥发闪存芯片。 论文基于自主设计的0.13微米SONOS存储单元及4Mb存储器电路对SONOS存储器的辐射特性、退化机理以及加固设计方法进行了研究。对SONOS存储单元辐射特性的研究表明，存储单元在总剂量辐射下的退化机制包括存储电荷丢失导致的阈值电压漂移和寄生晶体管效应导致的漏电流增加；结合存储器电路读取操作的辐射特性研究指出，总剂量辐射下读取操作失效是由于编程态存储器件的阈值电压漂移所导致；结合高压产生电路和高压通道电路的辐射特性研究指出，存储器擦写操作失效是由于存储阵列和高压通道的漏电流增加并超过了电荷泵电路的电流驱动能力所导致。针对单粒子效应的研究表明SONOS存储器具有良好的抗单粒子翻转能力，但局部闩锁效应会导致电源电流增大和存储器功能失效。在此基础上，论文从存储器的器件工艺、电路设计和版图设计三个层面采用针对性的系统加固设计方法研制出了抗辐射的4Mb闪存芯片，实测结果表明其抗总剂量辐射能力大于100krad(Si)，抗单粒子闩锁阈值大于42MeV cm2/mg。 论文同时基于部分耗尽绝缘体上硅(PD-SOI)工艺提出一种局部硅氧化隔离与深槽隔离相结合的十字交叉隔离技术，可以完全隔断总剂量辐射引起的漏电，并显著提高存储器电路版图的利用效率，实现SOI技术与高密度SONOS存储器电路的集成。基于上述方法研制出了256Kb抗辐射EEPROM闪存芯片，实测结果表明其在TID为100krad(Si)时漏电流无明显增加，抗瞬时辐射效应大于3e11rad(Si)/s，，抗单粒子闩锁能力强，验证了上述方法的有效性。 论文还对新型三维SONOS存储器件的可靠性及辐射特性进行了研究，探索了其可靠性退化机理和隧穿介质优化制备工艺。研究结果表明栅极全环绕结构3D-SONOS器件可获得更大的阈值电压窗口并抑制辐射导致的泄漏电流。
[Abstract]:The total dose radiation and the single-particle radiation present in the cosmic environment can lead to the loss of memory cell information and the failure of the flash memory chip. The charge-trapping SONOS memory device based on the discrete charge storage mechanism has better anti-radiation capability compared with the conventional floating gate device, and has wide application prospect in the space environment. In this paper, the radiation characteristics, degradation mechanism and reinforcement design method of SONOS memory cell and flash memory circuit are studied deeply, and the radiation-resistant non-volatile flash memory chip which meets the requirements of space application is developed. The radiation characteristics, the degradation mechanism and the reinforcement design method of the SONOS memory are studied based on the self-designed 0.13 micron SONOS memory cell and the 4Mb memory circuit. The study of the radiation characteristics of SONOS memory cell shows that the degradation mechanism of the memory cell under the total dose radiation includes the increase of the leakage current caused by the threshold voltage drift and the parasitic transistor effect caused by the storage charge loss, and the radiation characteristic study of the read operation in combination with the memory circuit. the read operation failure at the total dose radiation is due to the threshold voltage drift of the programmed memory device; the radiation characteristics of the combined high voltage generation circuit and the high voltage channel circuit refer to the failure of the memory erase operation is that the leakage current of the memory array and the high voltage channel is increased and exceeds the current driving capability of the charge pump circuit, The results show that the SONOS memory has good anti-single-particle turn-over capability, but the local self-locking effect can lead to the increase of the power current and the loss of the memory function. On the basis of this, a 4-Mb flash memory chip with radiation resistance was developed from three aspects of device technology, circuit design and layout design of memory. The results show that the anti-radiation capacity is more than 100 krad (Si ). The threshold of the anti-single-particle anti-lock is greater than 42 MeV cm2/ m. G. At the same time, based on a partial depletion-insulator-on-insulator (PD-SOI) process, a cross-crossing isolation technique combining local silicon oxidation isolation and deep trench isolation is proposed, which can completely block the leakage caused by the total dose radiation, and obviously improve the current of the memory circuit layout. Using efficiency to realize SOI technology and high-density SONOS memory circuit The results show that the leakage current is not obviously increased when the TID is 100 krad (Si), the anti-transient radiation effect is more than 3e11rad (Si)/ s, the anti-single-particle self-locking ability is strong, and the above-mentioned method is verified. The paper also studies the reliability and radiation characteristics of the new three-dimensional SONOS memory device. The results show that the gate-wide surround-structure 3D-SONOS device can obtain a larger threshold voltage window and suppress the radiation.
【学位授予单位】：清华大学
【学位级别】：博士
【学位授予年份】：2013
【分类号】：TP333
本文编号：2464777
[Abstract]:The total dose radiation and the single-particle radiation present in the cosmic environment can lead to the loss of memory cell information and the failure of the flash memory chip. The charge-trapping SONOS memory device based on the discrete charge storage mechanism has better anti-radiation capability compared with the conventional floating gate device, and has wide application prospect in the space environment. In this paper, the radiation characteristics, degradation mechanism and reinforcement design method of SONOS memory cell and flash memory circuit are studied deeply, and the radiation-resistant non-volatile flash memory chip which meets the requirements of space application is developed. The radiation characteristics, the degradation mechanism and the reinforcement design method of the SONOS memory are studied based on the self-designed 0.13 micron SONOS memory cell and the 4Mb memory circuit. The study of the radiation characteristics of SONOS memory cell shows that the degradation mechanism of the memory cell under the total dose radiation includes the increase of the leakage current caused by the threshold voltage drift and the parasitic transistor effect caused by the storage charge loss, and the radiation characteristic study of the read operation in combination with the memory circuit. the read operation failure at the total dose radiation is due to the threshold voltage drift of the programmed memory device; the radiation characteristics of the combined high voltage generation circuit and the high voltage channel circuit refer to the failure of the memory erase operation is that the leakage current of the memory array and the high voltage channel is increased and exceeds the current driving capability of the charge pump circuit, The results show that the SONOS memory has good anti-single-particle turn-over capability, but the local self-locking effect can lead to the increase of the power current and the loss of the memory function. On the basis of this, a 4-Mb flash memory chip with radiation resistance was developed from three aspects of device technology, circuit design and layout design of memory. The results show that the anti-radiation capacity is more than 100 krad (Si ). The threshold of the anti-single-particle anti-lock is greater than 42 MeV cm2/ m. G. At the same time, based on a partial depletion-insulator-on-insulator (PD-SOI) process, a cross-crossing isolation technique combining local silicon oxidation isolation and deep trench isolation is proposed, which can completely block the leakage caused by the total dose radiation, and obviously improve the current of the memory circuit layout. Using efficiency to realize SOI technology and high-density SONOS memory circuit The results show that the leakage current is not obviously increased when the TID is 100 krad (Si), the anti-transient radiation effect is more than 3e11rad (Si)/ s, the anti-single-particle self-locking ability is strong, and the above-mentioned method is verified. The paper also studies the reliability and radiation characteristics of the new three-dimensional SONOS memory device. The results show that the gate-wide surround-structure 3D-SONOS device can obtain a larger threshold voltage window and suppress the radiation.
【学位授予单位】：清华大学
【学位级别】：博士
【学位授予年份】：2013
【分类号】：TP333
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