65nm近阈值SRAM稳定性分析
发布时间：2019-05-20 14:42
【摘要】：本文通过将供电电压降低到近阈值区域实现低功耗的目的.现有标准6T-SRAM在近阈值电压下的性能非常差,且受工艺波动的影响很大.因此,本文提出了一种新型的8T-SRAM,与近阈值电压下的6管单元相比,其静态功耗基本相同,读噪声容限也增加了一倍.因此使该新型8管单元在实现低功耗的基础上保证了读写的稳定性.另外针对工艺波动对读噪声容限的影响进行分析,与6T-SRAM相比,新型8T-SRAM受工艺波动的影响更小.
[Abstract]:In this paper, the purpose of low power consumption is achieved by reducing the power supply voltage to the near threshold region. The performance of the existing standard 6T-SRAM at near threshold voltage is very poor, and it is greatly affected by the process fluctuation. Therefore, a new type of 8T 鈮，
本文编号：2481717
[Abstract]:In this paper, the purpose of low power consumption is achieved by reducing the power supply voltage to the near threshold region. The performance of the existing standard 6T-SRAM at near threshold voltage is very poor, and it is greatly affected by the process fluctuation. Therefore, a new type of 8T 鈮，
本文编号：2481717
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