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存储测试系统中FLASH的存储可靠性技术研究

发布时间:2019-06-10 15:27
【摘要】:NAND FLASH存储器具有非易失性、存储容量大和读写速度快等优点,在存储测试领域的应用越来越广泛。由于NAND FLASH存储器中不可避免会出现无效块,传统的管理方法是将无效块映射表存放在FLASH存储器中,可靠性低,对数据存储速度和可靠性都会造成不利影响。针对这些问题,提出了基于外置存储数据位的无效块快速检索架构,将无效块映射表存放在可靠性高的铁电存储器中;引入计算机网络中的滑动窗口原理,建立了基于滑动窗口的无效块预匹配机制,在不影响FLASH存取速度的情况下可无时延地生成有效块地址。经分析和论证,这种架构对NAND FLASH存储数据的可靠性和存取速度有很大的提升,提高了存储测试系统的整体性能。
[Abstract]:NAND FLASH memory has many advantages, such as non-volatile, large storage capacity and fast reading and writing speed, so it is more and more widely used in the field of storage testing. Because invalid blocks will inevitably appear in NAND FLASH memory, the traditional management method is to store invalid block mapping tables in FLASH memory with low reliability, which will adversely affect the speed and reliability of data storage. In order to solve these problems, a fast retrieval architecture of invalid blocks based on external storage data bits is proposed, and the invalid block mapping table is stored in ferroelectric memory with high reliability. Based on the principle of sliding window in computer network, an invalid block pre-matching mechanism based on sliding window is established, which can generate valid block address without delay without affecting the access speed of FLASH. Through analysis and demonstration, this architecture greatly improves the reliability and access speed of NAND FLASH storage data, and improves the overall performance of the storage test system.
【作者单位】: 中北大学仪器科学与动态测试教育部重点实验室;
【基金】:国家自然科学基金面上项目(51575499)
【分类号】:TP333

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