静态随机存储器双向互锁存储单元的抗老化设计

发布时间：2019-08-12 17:42

【摘要】：为了延长抗辐照静态随机存储器双向互锁存储单元(DICE)电路的使用时限,得到偏置温度不稳定性效应(BTI)老化效应对DICE单元性能的具体影响,提出抗老化设计方案.通过SPICE仿真实验,分析DICE单元的老化特性,发现因老化加重的读干扰和半选择干扰是影响DICE结构的SRAM单元稳定性和寿命的主要原因.针对DICE单元抗辐照结构的特性,提出新的DICE单元读写端口结构.通过在组成读写端口的4个晶体管之间加入额外的控制晶体管,阻断了DICE单元存储节点相连的路径,消除了读干扰和半选择干扰的影响,避免了单元的读故障和半选择故障的出现.改进后的DICE单元在读状态和半选择状态时的抗辐照能力与改进前相比得到了提升.通过仿真实验,验证了改进后DICE单元的功能正确性和抗老化有效性,直接减少了DICE单元经过108 s老化后22.6%的读失效率.
[Abstract]:In order to prolong the service time of (DICE) circuit in bidirectional interlocked memory cell of radiation-resistant static random access memory (RAM), the specific effect of bias temperature instability effect (BTI) aging effect on the performance of DICE cell is obtained, and an anti-aging design scheme is proposed. Through SPICE simulation experiment, the aging characteristics of DICE unit are analyzed. It is found that the reading interference and semi-selective interference due to aging are the main reasons that affect the stability and life of SRAM unit of DICE structure. According to the characteristics of radiation resistant structure of DICE unit, a new read and write port structure of DICE unit is proposed. By adding additional control transistors between the four transistors that make up the read-write port, the path of the memory node connection in DICE cell is blocked, the influence of read interference and semi-selection interference is eliminated, and the reading fault and semi-selection fault of the unit are avoided. The radiation resistance of the improved DICE unit in read state and semi-selected state is improved compared with that before improvement. The functional correctness and anti-aging effectiveness of the improved DICE unit are verified by simulation experiments, and the reading failure rate of the DICE unit after 108s aging is directly reduced.
【作者单位】：合肥工业大学电子科学与应用物理学院;
【基金】：国家自然科学基金面上项目(61371025,61574052,61274036)
【分类号】：TP333

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