基于复合结构的气体电子倍增器增益模拟和实验研究

发布时间：2018-01-18 01:14

  本文关键词：基于复合结构的气体电子倍增器增益模拟和实验研究　出处：《物理学报》2017年14期 　论文类型：期刊论文

  更多相关文章： 气体电子倍增器 微网结构气体探测器 增益

【摘要】：气体电子倍增器(GEM)作为高性能的微结构气体探测器在高能物理相关领域内得到了广泛的研究和应用.其中增益是GEM探测器基本性能研究中的一个重要参数,该值的精确测量至关重要.增益的测量一般采用电流测量或者能谱测量方法,但均存在精度较低或者过程繁琐的问题,且无法精确测量低增益值.针对GEM探测器增益的精确测量,本文提出了一种由GEM探测器与微网结构气体探测器(MM)级联构成的复合结构探测器(GEM-MM).利用GEM-MM结构以相对方法实现GEM增益的精确测量.该方法既可以省去传统方法中复杂的电子学标定过程,同时不需要进行原初电离电子数的估算,保证了增益的精确测量,并且可以实现GEM低增益的测量.基于GEM-MM测量GEM增益的原理,本文首先对GEM-MM电荷输运过程进行了模拟研究,优化了合适的工作电压.比较了三种不同类型和配比工作气体下GEM增益模拟结果,并在Ar/iC_4H_(10)(95/5)气体中测量了单层GEM在3—24范围内的有效增益.不同Penning系数下GEM增益的模拟结果表明,Penning系数为0.32时GEM增益的模拟结果与实验测量结果符合得很好.由此可以确定一个大气压下的Ar/iC_4H_(10)(95/5)气体中,Penning系数为0.32±0.01.
[Abstract]:Gas electron multiplier. As a high performance microstructured gas detector, it has been widely studied and applied in the field of high energy physics, in which gain is an important parameter in the basic performance research of GEM detector. The accurate measurement of this value is very important. The gain measurement usually adopts current measurement or energy spectrum measurement method, but there are some problems such as low precision or tedious process. And can not accurately measure the low gain value. For the GEM detector gain accurate measurement. In this paper, a composite structure detector composed of GEM detector and gas detector with microgrid structure is presented. Using GEM-MM structure to realize accurate measurement of GEM gain by relative method, this method can not only eliminate the complicated electronic calibration process in traditional methods. At the same time, there is no need to estimate the number of primary ionization electrons, which ensures the accurate measurement of gain, and can realize the low gain measurement of GEM. The principle of GEM gain measurement based on GEM-MM. In this paper, the charge transport process of GEM-MM is simulated and the suitable working voltage is optimized. The results of GEM gain simulation under three different types and ratios of working gases are compared. And in Ars / iC4hs / 10 / 95 / 5). The effective gain of monolayer GEM in the range of 3-24 has been measured in the gas. The simulation results of the GEM gain at different Penning coefficients show that the gain of the monolayer GEM is improved. The simulation results of GEM gain at 0.32 Penning coefficient are in good agreement with the experimental results, which can be used to determine the ar / iC4HSP / 95 / 5 at one atmospheric pressure. In the gas. The Penning coefficient is 0.32 卤0.01.
【作者单位】： 兰州大学核科学与技术学院;核探测与核电子学国家重点实验室;中国科学院高能物理研究所;中国科学院大学;
【基金】：国家重点研发计划“大科学装置前沿研究”重点专项(批准号:2016YFA0400400) 国家自然科学基金(批准号:11675197) 中国科学院高能物理研究所创新基金资助的课题~~
【分类号】：O572.21
【正文快照】： xf口 气体电子倍X椘，

本文编号：1438791