基于动力学标度法的a-C:H薄膜表面微观形貌的演变机理研究

发布时间：2018-06-28 08:20

  本文选题：a-C + H薄膜　； 参考：《原子能科学技术》2017年04期

【摘要】：采用等离子体增强化学气相沉积(PECVD)方法在Si(111)基底上制备a-C:H薄膜,利用原子力显微镜(AFM)和扫描电子显微镜(SEM)对a-C:H薄膜的表面形貌与表面粗糙度进行表征,并从动力学标度法角度出发讨论a-C:H薄膜表面粗糙度的演变机理。研究结果表明:a-C:H薄膜表面微观形貌为自仿射分形表面,可用分形维数来评价薄膜的表面粗糙度;随着H_2流量的增加,薄膜表面粗糙度先减小后增大,在T_2B与H_2流量比为0.2/6时,a-C:H薄膜的表面粗糙度R_q为2.2nm,相对于其他条件下生长的薄膜的表面粗糙度低,薄膜表面较光滑,致密性良好。
[Abstract]:A-C: h thin films were prepared on Si (111) substrates by plasma enhanced chemical vapor deposition (PECVD). The surface morphology and surface roughness of a-C: h films were characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The evolution mechanism of the surface roughness of a-C: h thin films is discussed from the point of view of dynamic scaling method. The results show that the micro-morphology of the thin film is a self-affine fractal surface, the surface roughness of the thin film can be evaluated by fractal dimension, and the surface roughness decreases first and then increases with the increase of H _ 2 flux. When the flow ratio of T _ 2B to H _ 2O _ 2 is 0.2 / 6, the surface roughness RQ of the thin film is 2.2 nm, which is lower than that of the thin film grown under other conditions. The surface of the thin film is smooth and compact.
【作者单位】： 中国工程物理研究院激光聚变研究中心;
【分类号】：O484
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本文编号：2077345