电磁超声相控阵激励源高频隔离驱动电路
发布时间：2018-09-11 13:37
【摘要】：为了进一步提高电磁超声相控阵激励源的工作效率,基于半桥拓扑放大结构提出了一种电磁超声相控阵激励源高频隔离驱动电路的设计方法.根据金属氧化物半导体场效应晶体管(metal oxide semiconductor field effect transistor,MOSFET)的简化模型,分析了MOSFET在开通和关断过程中的开关损耗,从而给出了高频隔离驱动电路所必须满足的条件.通过采用光纤器件隔离脉冲信号和DC-DC隔离电源对参考电位进行转换,有效解决了驱动电路的高频"浮栅"问题,并利用RC微分电路和施密特反相器设计了驱动信号死区时间可调电路.实验结果表明:设计的驱动电路能够输出频率为1.1 MHz、死区时间为0.32μs、驱动电压为18.8 V、占空比为26%的互补驱动信号,并且在驱动MOSFET栅极的实际应用中,有效降低了功率开关管的功率损耗.
[Abstract]:In order to further improve the working efficiency of electromagnetic ultrasonic phased array excitation source, a design method of high frequency isolation drive circuit for electromagnetic ultrasonic phased array excitation source is proposed based on half-bridge topology amplification structure. According to the simplified model of metal oxide semiconductor field effect transistor (metal oxide semiconductor field effect transistor,MOSFET), the switching loss of MOSFET in the process of turn-on and turn-off is analyzed, and the conditions which must be satisfied for the high-frequency isolation drive circuit are given. By using fiber optic device to isolate pulse signal and DC-DC isolation power source to convert reference potential, the problem of high frequency floating gate of driving circuit is effectively solved. The dead-time adjustable circuit of driving signal is designed by using RC differential circuit and Schmitt inverter. The experimental results show that the designed drive circuit can output complementary driving signals with a frequency of 1.1 MHz, dead time of 0.32 渭 s, driving voltage of 18.8V and duty cycle of 26%, and is used in the practical application of driving MOSFET gate. The power loss of the power switch is reduced effectively.
【作者单位】： 北京工业大学机械工程与应用电子技术学院;
【基金】：北京市科学技术委员会首都科技条件平台资助项目(Z141100003414001)
【分类号】：TB559;TM46;TN386
本文编号：2236841
[Abstract]:In order to further improve the working efficiency of electromagnetic ultrasonic phased array excitation source, a design method of high frequency isolation drive circuit for electromagnetic ultrasonic phased array excitation source is proposed based on half-bridge topology amplification structure. According to the simplified model of metal oxide semiconductor field effect transistor (metal oxide semiconductor field effect transistor,MOSFET), the switching loss of MOSFET in the process of turn-on and turn-off is analyzed, and the conditions which must be satisfied for the high-frequency isolation drive circuit are given. By using fiber optic device to isolate pulse signal and DC-DC isolation power source to convert reference potential, the problem of high frequency floating gate of driving circuit is effectively solved. The dead-time adjustable circuit of driving signal is designed by using RC differential circuit and Schmitt inverter. The experimental results show that the designed drive circuit can output complementary driving signals with a frequency of 1.1 MHz, dead time of 0.32 渭 s, driving voltage of 18.8V and duty cycle of 26%, and is used in the practical application of driving MOSFET gate. The power loss of the power switch is reduced effectively.
【作者单位】： 北京工业大学机械工程与应用电子技术学院;
【基金】：北京市科学技术委员会首都科技条件平台资助项目(Z141100003414001)
【分类号】：TB559;TM46;TN386
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，本文编号：2236841
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