掺杂、插层硫族化合物的制备及其物性研究

发布时间：2017-12-27 12:25

本文关键词：掺杂、插层硫族化合物的制备及其物性研究　出处：《东南大学》2015年硕士论文　论文类型：学位论文

【摘要】：近年来随着石墨烯研究热潮的掀起,过渡族金属二硫属化物(TMDCs)因其在光、电、机械、化学以及热等方面具有的独特性质也引起了科研工作者的兴趣。二硫化钼和二碲化钨是该体系的两种典型代表物质,其中,二硫化钼具有类似石墨烯的结构和性能,在克服零带隙石墨烯的缺点的同时,依然有石墨烯的很多优点,从而在场效应晶体管、传感器、电致发光、电存储等众多领域有广阔的应用前景；而二碲化钨具有与二硫化钼类似的层状结构,最近报道称其在60T下仍具有不饱和的巨大的磁电阻效应,这是继TMDCs中被普遍研究的CDW态和超导态之外的又一独特性质,迅速激起了人们对WTe2材料的研究热情。在二硫化钼和二碲化钨这样的层状体系中进行高浓度掺杂或者在层间插层,可使其物理性质发生了巨大的改变,激发出优异的物理性能。本论文的主要研究内容如下：1.通过水溶液法制备了掺锰二硫化钼粉末,并利用XRD、SEM和拉曼对其进行表征,锰的掺杂使得二硫化钼层内原子距离缩小而层间距离扩大。2.以二硫化钼为钼源、硫化锰为锰源,通过固相反应法得到了名义掺杂为0.05-0.5的一系列样品,随着掺杂量的提高,样品的晶格常数a和c都呈现增大的趋势；更换原料,以钼单质和锰单质为初始反应物,获得了呈花瓣状的Mn0.05Mo0.95S2多晶样品,SEM分析显示样品是由尺寸从200nnm到10μmm大小不等的六边形晶粒组成。3.利用激光脉冲沉积系统制备出了掺锰的二硫化钼薄膜,提高氧分压有利于薄膜的结晶,并根据M003薄膜吸收度的测定,计算得到了不同氧分压下生长的M003薄膜的禁带宽度。4.利用CVT法制备出了尖叶状的Fe0.28MoS2单晶样品,实验结果表明调节石英管的长度及其在钢玉管中的位置可以控制单晶的生长,晶体的生长速率和生长模式都与沉积温度有很大的关系；以MoSSe为例,比较了固相反应法和CVT法生长单晶的情况,结果表明CVT法在制备TMDCs材料大块单晶样品方面具有优势。5.探索了Fe掺杂对WTe2单晶R-T以及MR-T行为的影响,发现Fe的掺杂不仅能够提高样品的质量,还可以提高样品的XMR到4倍以上；Ta, Re和Ir的掺杂对WTe2的XMR有不同程度的抑制作用,其中Ta掺杂的抑制作用相对较小,而Re和Ir的掺杂导致XMR降低至3%以下,这为WTe2带隙的调节给出了有益的建议。
[Abstract]:In recent years, with the upsurge of graphene research, transition metal two chalcogenide (TMDCs) has attracted the interest of researchers because of its unique properties in light, electricity, machinery, chemistry and heat. Two tungsten molybdenum disulfide and telluride are two typical representative substances, the system including molybdenum disulfide has similar structure and properties of graphene, graphene in overcoming the zero band gap. In addition, there are still many advantages of graphene, and field effect transistors, sensors, electroluminescence, electric storage etc. have a broad application prospect; and the two telluride tungsten has a layered structure with MoS2 similar to that recently reported that it still has a huge magnetoresistance effect is not saturated in 60T, which is a unique nature after the CDW state is generally in the study of TMDCs and superconducting state, quickly aroused the people of WTe2 material research enthusiasm. High concentration doping or interlaminar intercalation in molybdenum disulfide and two tungsten telluride can cause great changes in physical properties and excite excellent physical properties. The main contents of this paper are as follows: 1., manganese doped molybdenum disulfide powder was prepared by aqueous solution method, and characterized by XRD, SEM and Raman. The doping of manganese makes the distance between atoms in the molybdenum disulfide layer shrink, and the distance between layers increases. With 2. molybdenum disulfide as molybdenum source, manganese sulfide as manganese source by solid phase reaction method has been the name for a series of 0.05-0.5 doped samples, with the doping amount increase, the lattice constants of a and C were increased; the replacement of raw materials, with molybdenum and manganese powder as the initial reactant, obtained a petal shaped Mn0.05Mo0.95S2 polycrystalline samples, SEM analysis showed that the samples are composed of hexagonal grain size from 200nnm to 10 mm the size of the composition. 3., Mn doped molybdenum disulfide thin films were prepared by laser pulse deposition system. Increasing oxygen partial pressure is beneficial to the crystallization of thin films. According to the measurement of absorbance of M003 thin films, the forbidden band width of M003 films grown under different oxygen partial pressures is calculated. 4. using CVT prepared Fe0.28MoS2 single crystal sample tip thallus. Experimental results show that adjusting the length of the quartz tubes and its position in the corundum tubes can control crystal growth, crystal growth rate and growth patterns have a great relationship with the deposition temperature; in the case of MoSSe, compared with the solid phase reaction method and CVT method the growth of single crystals, results show that CVT method has the advantage of large single crystal samples in the preparation of TMDCs material system. 5. to explore the effect of Fe doping on WTe2 single crystal R-T and MR-T, found that Fe doping can not only improve the quality of the sample, but also can improve the XMR of the sample to more than 4 times; Ta, Re and Ir doping on WTe2 XMR have different degrees of inhibition, the addition of Ta inhibited by relatively small however, Re and Ir doped lead XMR decreased to below 3%, the band gap of WTe2 regulation gives some useful suggestions.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：O613.71;O483

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