半导体微结构中光学特性的量子调控

发布时间：2018-12-10 23:52

【摘要】：量子相干作为量子光学领域中重要角色之一,显然已成为物理学中的一个重要分支。一方面,在原子,分子以及光物理中,基于量子相干的研究已经备受人们的广泛关注。如电磁感应透明度,高效四波混频,超低光学孤子以及折射率增强等。另一方面,在半导体量子阱和量子点中基于量子干涉的许多非线性光学现象也已经被人们广泛研究,如电磁感应透明度,超快全光学开关,克尔非线性,无吸收折射率增强以及其他新的现象。近年来,半导体一直是一个热门的研究对象,无论是在发光二极管还是光电探测领域,半导体其特殊的导电特性吸引着很多研究人员的注意。本文主要研究半导体微结构中弱场的光学特性。通过系统参量的调控,成功实现了对无吸收折射率增强的控制。首先,我们研究量子干涉对半导体量子点中弱场的吸收色散性能的影响。研究发现,通过对耦合场的强度和频率失谐的调控,相对于原子系统可以显著地改善其吸收色散特性。并且,我们的方法与前人的研究有很大的不同。(1)我们的侧重点是研究在半导体量子点中弱场的折射性能的可控性,尤其是在无吸收折射率增强中起到的重要作用。(2)我们发现在该半导体量子点中可以容易地获得具有吸收抑制的正或负折射率,以及仅通过调节控制场的失谐和非相干泵浦场,让系统在正折射率和负折射率之间灵活转换。接下来,我们研究分析了一个非对称双半导体量子阱中的弱探测场的二维吸收谱峰。发现由于驻波场和相干耦合场引起的量子干涉,通过在调整系统参数可以容易地控制其二维吸收谱峰。最重要的是,吸收峰可以定位于特定位置,并且通过对系统参数的适当调整,在驻波场的一个周期范围内找吸收峰的最大概率为。最后,我们探讨了一个四能级非对称双半导体量子阱中弱探测场的吸收色散特性。发现通过适当地调整系统的相应参数可以容易地控制实现无吸收折射率增强。我们的方案可以为色散补偿和量子信息处理在固态量子通信中的技术应用提供一些新的可能性。
[Abstract]:As one of the important roles in the field of quantum optics, quantum coherence has obviously become an important branch of physics. On the one hand, quantum coherence has attracted much attention in atom, molecule and photophysics. Such as electromagnetic induction transparency, high efficiency four-wave mixing, ultra-low optical soliton and refractive index enhancement. On the other hand, many nonlinear optical phenomena based on quantum interference in semiconductor quantum wells and quantum dots have been widely studied, such as electromagnetic induction transparency, ultra-fast all-optical switch, Kerr nonlinearity, etc. Non-absorption index enhancement and other new phenomena. In recent years, semiconductor has been a hot research object, whether in the field of light-emitting diodes or photoelectric detection, the special conductivity of semiconductor has attracted the attention of many researchers. The optical properties of weak fields in semiconductor microstructures are studied in this paper. By adjusting the system parameters, the control of non-absorption index enhancement is successfully realized. First, we study the influence of quantum interference on the absorption dispersion of weak field in semiconductor quantum dots. It is found that the absorption dispersion can be significantly improved by adjusting the intensity and frequency detuning of the coupled field compared with the atomic system. Moreover, our method is quite different from previous studies. (1) our focus is on the controllability of the refraction properties of weak fields in semiconductor quantum dots. In particular, it plays an important role in the enhancement of non-absorptive refractive index. (2) We find that it is easy to obtain positive or negative refractive index with absorption inhibition in the semiconductor quantum dots. And only by adjusting the detuning and incoherent pump field of the control field, the system can be converted flexibly between positive and negative refractive index. Next, we investigate the two-dimensional absorption spectra of a weak probe field in an asymmetric double semiconductor quantum well. It is found that the two-dimensional absorption peak can be easily controlled by adjusting the system parameters due to quantum interference caused by standing wave field and coherent coupling field. The most important thing is that the absorption peak can be located at a specific position and the maximum probability of finding the absorption peak within a period of standing wave field is obtained by adjusting the system parameters appropriately. Finally, we investigate the absorption dispersion of the weak probe field in a four-level asymmetric double-semiconductor quantum well. It is found that the non-absorption index enhancement can be easily controlled by adjusting the corresponding parameters of the system. Our scheme can provide some new possibilities for dispersion compensation and quantum information processing in solid-state quantum communication.
【学位授予单位】：安徽大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：O47

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