短沟道MOSFET高频噪声特性研究

发布时间：2018-02-23 18:44

本文关键词： 短沟道 MOSFET 过剩噪声高频噪声模型二端口噪声网络噪声去嵌　出处：《西南科技大学》2017年硕士论文　论文类型：学位论文

【摘要】：短沟道MOSFET因其高集成度、高性能、低功耗和低成本的优点,被广泛应用于射频与毫米波集成电路中。作为设计CMOS低噪声电路的基础,不同工艺下其高频噪声模型明显不同,因此新型器件噪声模型的建立往往都滞后于新型器件的出现。用于高频领域的CMOS技术的缩比进展表明其最佳的高频性能已从低中反区转移至弱反区。而随着器件尺寸的缩小,器件高频过剩噪声日益增加,其主要成分主要从热噪声转变为散粒噪声,传统的长沟道噪声模型已不能完全表征器件相关噪声。并且短沟道MOSFET噪声等效模型表征了器件的高频噪声特性,利用该模型不仅可以指导电路设计,而且可以指导芯片制造者做出更高性能的器件。本文重点研究短沟道MOSFET高频噪声特性,主要内容包括如下几个方面:基于40纳米MOSFET的器件物理结构,并结合漂移-扩散方程和电荷守恒定律,提出了基于物理的高频漏极电流噪声模型、感应栅极电流噪声模型及其与漏极电流噪声的互相关噪声模型,以此来统一表征噪声从弱反区到强反区的频率与偏置依赖性。通过将衬底噪声模型和有效栅极过载引入高频噪声模型中,使得统一模型具有良好的准确性、连续性和平滑性。最后,基于短沟道MOSFET高频等效噪声电路模型及其四噪声参数文献数据,利用二端口网络噪声去嵌技术提取漏极电流噪声、感应栅极电流噪声和互相关噪声的数据,并通过与所建模型的仿真数据对比,分析了短沟道MOSFET高频噪声的机理并验证了所建噪声相关模型的实用性和准确性。
[Abstract]:Short channel MOSFET because of its high integration, high performance, low power consumption and low cost, is widely used in RF and millimeter wave integrated circuits. As the basis for the design of CMOS low noise circuit, the high frequency noise model under different technological conditions were different, so to establish a new model of device noise often lag in the new device. For high frequency CMOS technology on the field scale developments show the best performance of high frequency from low back area transferred to the weak inversion region. With the reduced size of the device, the device of high frequency excess noise increasing, its main component is mainly from the thermal noise into the shot noise, long channel noise the traditional model has been unable to fully characterize the device noise. And short channel MOSFET noise model to characterize the noise characteristics of the device, the model can not only guide the circuit design, and can guide the chip The manufacturer made devices with high performance. This paper focuses on the research of short channel MOSFET high frequency noise characteristics, the main contents are as follows: 40 nano device physics structure based on MOSFET, and combined with the drift diffusion equation and the law of conservation of charge, the high frequency physical drain current noise model based on induced gate current noise the model and the drain current noise cross correlation noise model, in order to offset frequency and unified representation from weak to strong anti noise and anti area. The dependence of the substrate noise model and the effective gate overload the high-frequency noise in the model, the unified model has good accuracy, continuity and smoothness. Finally, the noise equivalent circuit of MOSFET high frequency model of short channel and four noise parameters based on literature data, using the two port network to block noise extraction of drain current induced gate current noise. The noise and cross-correlation noise data are analyzed, and the mechanism of short channel MOSFET high frequency noise is analyzed by comparing with the simulation data of the built model, and the practicability and accuracy of the noise correlation model is verified.

【学位授予单位】：西南科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386

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