基于间隙波导的V波段功率合成放大器的研究

发布时间：2018-11-16 09:01

【摘要】：毫米波固态功率放大器是毫米波发射机系统中的重要部件,为了追求固态功率放大器的小型化、高功率和宽带特性,本文在大量调研V波段功率合成技术及脊间隙波导技术的基础上,结合二者的优势,探索性地提出了一种基于脊间隙波导的V波段功率合成放大器方案,该方案具有低损耗、宽带、小型化和散热良好的特点。本文首先详细介绍了 EBG结构与脊间隙波导的理论基础,分析比较了 EBG结构与电磁软硬表面的异同,并在HFSS中分别用直接传输线法和色散图法分析与验证了销钉型EBG结构的带隙特性。其次探索性地提出了一种新型脊间隙波导-矩形波导转换结构,该结构适用于V波段全频带,仿真结果表明,在51GHz-82GHz,S11低于-20dB,相对带宽达到46.6%。同时设计了一种V波段脊间隙波导-微带转换结构,仿真结果表明,在50GHz-75GHz,S11低于-20dB,相对带宽40%。然后加工并测试了单路背靠背无源结构和单路放大器,测试结果验证了两种转换结构方案的可行性。接着分析比较了 V波段微带线功分器、波导分支电桥和脊间隙波导功分器,重点设计了V波段脊间隙波导1分2功分器和1分4功分器。仿真结果表明,脊间隙波导1分2功分器在整个V波段,S11在-20dB以下。1分4功分器在51GHz-68GHz,S11低于-20dB。然后加工并测试了 2路功率分配合成网络,测试结果验证了脊间隙波导功分器方案的可行性。最后在偏置电路优化设计、介质基片和功率芯片选型的基础上,对V波段脊间隙波导4路功率合成放大器进行了设计、仿真与性能预测。其中4路功率分配合成网络的仿真结果表明,在53GHz-65GHz,S11低于-15dB,损耗在0.29dB以内。同时设计了放大器的腔体结构并对放大器进行了热仿真计算,结果验证了该方案良好的散热性能。本文对脊间隙波导在功率放大器上的应用进行了探索性研究,对脊间隙波导在有源器件上的应用具有积极的借鉴意义。
[Abstract]:Millimeter-wave solid-state power amplifier is an important component in millimeter-wave transmitter system. In order to pursue the miniaturization, high power and wideband characteristics of solid-state power amplifier, Based on a large number of investigations on V band power synthesis technology and ridge gap waveguide technology, a novel V band power synthesis amplifier scheme based on ridge gap waveguide is proposed in this paper, which has low loss. Broadband, miniaturization and good heat dissipation features. In this paper, the theoretical basis of EBG structure and ridge gap waveguide is introduced in detail, and the similarities and differences between EBG structure and electromagnetic soft and hard surface are analyzed and compared. The band gap characteristics of pin type EBG structure are analyzed and verified by direct transmission line method and dispersion graph method in HFSS. Secondly, a novel ridge gap waveguide / rectangular waveguide conversion structure is proposed, which is suitable for V band. The simulation results show that the relative bandwidth is 46.6 at 51GHz ~ 82GHz S11 lower than -20dB. At the same time, a V-band ridge gap wave-microstrip conversion structure is designed. The simulation results show that the relative bandwidth is 40 at 50GHz ~ 75GHz S11 lower than -20dB. Then the single-channel back-to-back passive structure and the single-channel amplifier are fabricated and tested. The test results verify the feasibility of the two schemes. Then, the V-band microstrip line power divider, waveguide branch bridge and ridge gap waveguide splitter are analyzed and compared. The V-band ridge gap waveguide 1 splitter, 2 splitter and 1 splitter 4 power divider are designed. The simulation results show that the ridge gap waveguide splitter is in the whole V band, the S11 is below-20dB, and the power divider is lower than -20 dB at 51GHz ~ 68GHz S11. Then two power distribution synthesis networks are fabricated and tested. The experimental results verify the feasibility of the power divider scheme of ridge gap waveguide. Finally, on the basis of the optimized design of bias circuit, the selection of dielectric substrate and power chip, the design, simulation and performance prediction of 4-channel power synthesizer for V-band ridge gap waveguide are carried out. The simulation results of 4-channel power distribution synthesis network show that the loss is within 0.29dB at 53GHz ~ 65GHz S11 lower than -15db. At the same time, the cavity structure of the amplifier is designed and the thermal simulation of the amplifier is carried out. The results show that the scheme has good heat dissipation performance. In this paper, the application of ridge gap waveguide in power amplifier is studied, which is helpful to the application of ridge gap waveguide in active devices.
【学位授予单位】：南京理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN722

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