某集成电路企业刻蚀工位有害物质逸散数值模拟研究

发布时间：2018-11-01 11:54

【摘要】：近年来,随着电子信息产业的兴起,互联网时代进程的加深,手机、平板电脑等电子设备和互联网通讯设备的需求量日益增加,集成电路的应用也越来越广泛。集成电路产业生产工艺复杂、工序多,有害因素数量多、接触广、毒性大,整个生产过程涉及的气态、液态、粉尘、非电离辐射和电离辐射各种形态的危害。所以集成电路制造企业存在的有害因素不容小觑,研究其职业危害情况是非常有意义的。本文选取某一实际集成电路制造企业的刻蚀工位为例,以有害物质HF气体的扩散规律为研究对象,应用数值模拟的方法分析了HF气体扩散的影响因素。首先,对刻蚀工位所在洁净空间进行简化,应用Gambit软件建立抽象几何模型并进行网格划分。然后将几何模型导入流体力学计算软件Fluent,通过设置不同参数,模拟在不同工况下刻蚀工位的有害物质HF气体的扩散情况,最后根据不同的扩散情况分析相应的职业危害情况。研究表明,正常工况下,该集成电路制造企业刻蚀工位HF气体在一定时间内挥发扩散,范围约占计算空间的50%。另外,送风口数量、排风口数量、排风口位置、排风口面积是影响洁净室内有害物质HF气体扩散情况的关键因素。首先,相比两个送风口,一个送风口的洁净空间HF气体的运动路径更复杂,扩散范围更大,约占计算空间的75%;第二,当取消反应腔内部排风口设置后(可视为内置排风口故障),HF气体的扩散情况是几次模拟中效果最差的,运动路径非常复杂,扩散范围几乎占据了整个计算空间(100%);第三,相比排风口设置在后壁,将排风口设置到顶面后,HF气体运动路径较简单,扩散范围较小,约占计算空间的25%;第四,将排风口的面积增大两倍后,HF气体的扩散情况是几次模拟中效果最好的,运动路径非常规律,扩散范围不到计算空间的10%,是正常工况扩散范围的五分之一。由此提出,将排风口设置在氧化膜腐蚀机反应腔顶面并相应增大面积,可以更好地保证通风换气效果。另外,本文还针对该例中实际工作情况提出了相关的职业卫生建议。
[Abstract]:In recent years, with the rise of electronic information industry and the deepening of the Internet era, the demand for electronic devices such as mobile phones, tablets and Internet communication equipment is increasing day by day, and the application of integrated circuits is becoming more and more extensive. The production process of integrated circuit industry is complex, the working procedure is many, the number of harmful factors is many, the contact is wide, the toxicity is big, the whole production process involves various kinds of harm of gas state, liquid state, dust, non-ionizing radiation and ionizing radiation. Therefore, the harmful factors of IC manufacturing enterprises should not be underestimated, it is very meaningful to study the occupational hazards. In this paper, the etching station of a practical IC manufacturing enterprise is selected as an example, the diffusion law of harmful HF gas is taken as the research object, and the influence factors of HF gas diffusion are analyzed by numerical simulation method. Firstly, the clean space of the etching station is simplified, and the abstract geometric model is established by using Gambit software and the mesh is divided. Then the geometric model was introduced into the hydrodynamic calculation software Fluent, to simulate the diffusion of HF gas which etched in different working conditions by setting different parameters. Finally the occupational hazards were analyzed according to the different diffusion conditions. The results show that under normal working conditions, the etching station HF gas in the integrated circuit manufacturing enterprise is volatilized and diffused in a certain time, and the range is about 50% of the calculation space. In addition, the quantity of air outlet, the location of outlet and the area of outlet are the key factors to influence the diffusion of HF gas in clean room. Firstly, compared with two air outlets, the movement path of HF gas in clean space of one outlet is more complex, and the diffusion range is larger, accounting for about 75% of the computational space. Second, when the exhaust outlet in the reaction chamber is cancelled (which can be regarded as the internal exhaust outlet fault), the diffusion of), HF gas is the worst in several simulations, and the movement path is very complex. The diffusion range occupies almost the entire computational space (100%); Third, compared with the exhaust port in the rear wall, the HF gas movement path is simple and the diffusion range is smaller, accounting for about 25% of the calculation space after the exhaust air outlet is set to the top surface. Fourth, the diffusion of HF gas is the best in several simulations when the area of the outlet is increased by twice. The movement path is very regular, the diffusion range is less than 10 times of the calculated space, which is 1/5 of the normal working condition diffusion range. It is suggested that the ventilation effect can be better ensured by setting the exhaust air outlet on the top surface of the reaction chamber of the oxide film corrosion machine and increasing the area accordingly. In addition, this article also puts forward the related occupational health suggestions for the actual work situation in this example.
【学位授予单位】：首都经济贸易大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：R134

【参考文献】